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Epitaxy of Single Crystal Phase Change Materials on Si(111)

Published online by Cambridge University Press:  29 June 2011

P. Rodenbach ,
K. Perumal ,
F. Katmis ,
W. Braun ,
R. Calarco  and
H. Riechert
P. Rodenbach
Affiliation:
Paul-Drude-Institut für Festkörperelektronik, Hausvogteiplatz 5-7, 10117 Berlin, Germany
K. Perumal
Affiliation:
Paul-Drude-Institut für Festkörperelektronik, Hausvogteiplatz 5-7, 10117 Berlin, Germany
F. Katmis
Affiliation:
Paul-Drude-Institut für Festkörperelektronik, Hausvogteiplatz 5-7, 10117 Berlin, Germany
W. Braun
Affiliation:
Paul-Drude-Institut für Festkörperelektronik, Hausvogteiplatz 5-7, 10117 Berlin, Germany CreaTec Fischer Co. GmbH, Industriestr. 9,74391 Erligheim, Germany
R. Calarco
Affiliation:
Paul-Drude-Institut für Festkörperelektronik, Hausvogteiplatz 5-7, 10117 Berlin, Germany
H. Riechert
Affiliation:
Paul-Drude-Institut für Festkörperelektronik, Hausvogteiplatz 5-7, 10117 Berlin, Germany
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Abstract

Phase change materials along the GeTe-Sb2Te3 pseudobinary line (GST) are grown by molecular beam epitaxy (MBE) on Si(111). The growth on (111) oriented substrates leads to greatly increased crystal quality compared to (001) oriented substrates, even for a high lattice mismatch. This holds true even for Si substrates which have a lattice mismatch of around 10% with respect to GST. The growth is controlled in situ via line of sight quadrupole mass spectrometer (QMS). Structural characterization is performed in situ by X-ray diffraction (XRD), which reveals a clear cubic symmetry of the film and a lattice slightly rhombohedrally distorted along the [111] direction.

Keywords

molecular beam epitaxy (MBE)x-ray diffraction (XRD)crystalline
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1338: Symposium R – Phase-Change Materials for Memory and Reconfigurable Electronics Applications , 2011 , mrss11-1338-r05-10
Copyright
Copyright © Materials Research Society 2011

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References

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