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Evaluation of PECVD deposited Boron Nitride as Copper DiffusionBarrier on Porous Low-k Materials

Published online by Cambridge University Press:  17 March 2011

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Abstract

Ultra low dielectric constant (κ) material is needed as the inter-metaldielectrics to reduce RC delay when device dimension is scaled to sub-100nm.Porous dielectric films have been considered as good candidates for theapplication as inter-metal dielectrics due to their ultra low-k properties.Identifying proper dielectric copper diffusion barrier on the porous low-kfilms is critical for the low-k/Cu damascene fabrication process. In thisstudy, we have evaluated the compatibility of plasma-deposited amorphousBoron Nitride film as a dielectrics copper diffusion barrier on a MSQ-basedporous low-k LKD5109 film (from JSR). Both microwave plasma enhanced CVD(2.45 GHz) and radio-frequency plasma enhanced CVD (13.56 MHz) were appliedfor the BN deposition in order to evaluate the compatibility of the twoplasma processes with the porous film. Growth parameters were optimized tominimize the boron diffusion and carbon depletion in the porous low-k films,which were found to have deleterious effects on the dielectric properties ofthe low-k films. FTIR and micro-Raman were employed for analyzing thechanges in chemical structure of the low-k films after BN growth.Capacitance-voltage measurement was used to characterize the dielectricconstants of BN film on Si and the BN-deposited porous low-k film. SIMScharacterization was carried out to evaluate the performance of the BN filmagainst copper diffusion.

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MRS Online Proceedings Library (OPL) , Volume 812: Symposium F – Materials, Technology and Reliability for Advanced Interconnects and Low-k Dielectrics-2004 , 2004 , F2.9
Copyright
Copyright © Materials Research Society 2004

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