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Excitonic Enhanced Optical Gain Of GaN/AlGaN Quantum Wells With Localized States

Published online by Cambridge University Press:  10 February 2011

Takeshi Uenoyama
Takeshi Uenoyama*
Affiliation:
Central Research Laboratories, Matsushita Electric Industrial Co., Ltd., 3–4 Hikaridai, Seikacho, Sourakugun, Kyoto 619–02, Japan, suzuki@crl.mei.co.jp
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Abstract

We have evaluated the optical gain of GaN/AlGaN quantum well structures with localized states, taking into account the Coulomb interaction. The localized states axe introduced in the well as quantum dot-like subband states. We have used the temperature Green's function formalism to treat the many-body effects and have found a new excitonic enhancement of the optical gain involved the localized states. This enhancement is stronger than the conventional Coulomb enhancement. It might play an important role to reduce the threshold carrier density.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 482 , 1997 , 805
Copyright
Copyright © Materials Research Society 1998

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