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Fast Photoluminescence from Porous Silicon

Published online by Cambridge University Press:  28 February 2011

V. Petrova-Koch ,
T. Muschik ,
D. I. Kovalev ,
F. Koch  and
V. Lehmann
V. Petrova-Koch
Affiliation:
Tech. Univ. Munich, Physics Dept., D-8046 Garching, Germany
T. Muschik
Affiliation:
Tech. Univ. Munich, Physics Dept., D-8046 Garching, Germany
D. I. Kovalev
Affiliation:
A.F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia
F. Koch
Affiliation:
Tech. Univ. Munich, Physics Dept., D-8046 Garching, Germany
V. Lehmann
Affiliation:
Siemens Research Laboratories, D-8000 Munich 83, Germany
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Abstract

Time-resolved studies of the visible photoluminescence in porous silicon with three different coverages of the internal surface are reported. We use aged, naturally oxidized porous Si (oxihydride), rapid thermal processed material (oxide) and samples stored in HF (pure hydride). A new, fast luminescence band in the blue-green spectral range and with response time less than 100 ns is observed at room temperature in each of the samples, although with different intensities. The observations prove that this is not an oxide-defect luminescence. We speculate on mechanisms for the origin of the fast luminescence in nanometer-size crystallites of Si.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 283: Symposium F – Microcrystalline Semiconductors–Materials Science and Devices , 1992 , 179
Copyright
Copyright © Materials Research Society 1993

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References

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