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Fatigue in PZT Thin Films

Published online by Cambridge University Press:  21 March 2011

V. Shur ,
E. Nikolaeva ,
E. Shishkin ,
I. Baturin ,
D. Bolten ,
O. Lohse  and
R. Waser
V. Shur
Affiliation:
Institute of Physics and Applied Mathematics, Ural State University, 51 Lenn Ave., Ekaterinburg 620083, Russia
E. Nikolaeva
Affiliation:
Institute of Physics and Applied Mathematics, Ural State University, 51 Lenn Ave., Ekaterinburg 620083, Russia
E. Shishkin
Affiliation:
Institute of Physics and Applied Mathematics, Ural State University, 51 Lenn Ave., Ekaterinburg 620083, Russia
I. Baturin
Affiliation:
Institute of Physics and Applied Mathematics, Ural State University, 51 Lenn Ave., Ekaterinburg 620083, Russia
D. Bolten
Affiliation:
Institute fuer Werkstoffe der Elektrotechnik, RWTH Aachen, D-52056 Aachen, Germany
O. Lohse
Affiliation:
Institute fuer Werkstoffe der Elektrotechnik, RWTH Aachen, D-52056 Aachen, Germany
R. Waser
Affiliation:
Institute fuer Werkstoffe der Elektrotechnik, RWTH Aachen, D-52056 Aachen, Germany
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Abstract

We have used the new approach to fatigue phenomenon for analysis of the switching current and C-V characteristic evolution during cycling in PZT thin films. It was shown that in accordance with theoretical predictions the rejuvenation stage precedes the fatigue one. We have demonstrated that fatigue behavior corresponds to the spreading of the internal bias field distribution function during ac switching.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 655 , 2000 , CC10.8.1
Copyright
Copyright © Materials Research Society 2001

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