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Formation of New Semiconducting Ge-Si-Fe Alloy on Si(100) and its Optical Properties

Published online by Cambridge University Press:  10 February 2011

H. Chen ,
P. Han ,
X.D. Huang ,
L.Q. Hu ,
Y. Shi  and
Y.D. Zheng
H. Chen
Affiliation:
Department of Physics, Nanjing University, Nanjing 210093, P.R. China
P. Han
Affiliation:
Department of Physics, Nanjing University, Nanjing 210093, P.R. China
X.D. Huang
Affiliation:
Department of Physics, Nanjing University, Nanjing 210093, P.R. China
L.Q. Hu
Affiliation:
Department of Physics, Nanjing University, Nanjing 210093, P.R. China
Y. Shi
Affiliation:
Department of Physics, Nanjing University, Nanjing 210093, P.R. China
Y.D. Zheng
Affiliation:
Department of Physics, Nanjing University, Nanjing 210093, P.R. China
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Abstract

We report a new semiconducting Ge-Si-Fe alloy thin film grown on Si(100) by reactive deposition epitaxy(RDE) using high vacuum evaporation technique. AES and XRD results show that the new alloy can be regarded as a distorted β-FeSi2 with the Ge participation. The direct band gap of the Ge-Si-Fe alloy was determined to be 0.83eV by optical transmission measurement, which means a red shift of band gap compared with that of β-FeSi2 (Eg=0.87eV).

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 421: Symposium D – Compound Semiconductor Electronics and Photonics , 1996 , 287
Copyright
Copyright © Materials Research Society 1996

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References

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