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Gallium Arsenide Layers Grown By Mbe on Germanium Islands on Insulator

Published online by Cambridge University Press:  28 February 2011

M. Takai ,
Y. Kodama ,
T. Tanigawa ,
K. Kobayashi ,
K. Gamo  and
S. Namba
M. Takai
Affiliation:
Faculty of Engineering Science, Osaka University, Toyonaka, Osaka, Japan
Y. Kodama
Affiliation:
Faculty of Engineering Science, Osaka University, Toyonaka, Osaka, Japan
T. Tanigawa
Affiliation:
Faculty of Engineering Science, Osaka University, Toyonaka, Osaka, Japan
K. Kobayashi
Affiliation:
Faculty of Engineering Science, Osaka University, Toyonaka, Osaka, Japan
K. Gamo
Affiliation:
Faculty of Engineering Science, Osaka University, Toyonaka, Osaka, Japan
S. Namba
Affiliation:
Faculty of Engineering Science, Osaka University, Toyonaka, Osaka, Japan
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Abstract

Local variation of photoluminescence (PL) spectra for MBE GaAs grown on an insulating substrate with Ge-islands interface layers, prepared by zone melting recrystallization, has been investigated. The GaAs layers on the single crystalline Ge islands emit PL, the intensity of which was almost comparable to that of the GaAs layers on bulk Ge, while by a factor of 50 lower PL intensity was observed for the GaAs layers on Si02. PL spectra were found to show peak shifts due to the band-gap variation near the interface layer of GaAs, which was in good agreement with the residual strain obtained by microprobe Raman scattering for underlying Ge islands.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 53 , 1985 , 181
Copyright
Copyright © Materials Research Society 1986

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References

REFERENCES

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