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GaN Electrochemical Probes and MEMS on Si

Published online by Cambridge University Press:  01 February 2011

Ulrich Heinle ,
Peter Benkart ,
Ingo Daumiller ,
Mike Kunze  and
Ertugrul Sönmez
Ulrich Heinle
Affiliation:
ulrich.heinle@microgan.com, MicroGaN GmbH, R&D, Albert-Einstein-Allee 45, Ulm, 89081, Germany, +497315026190, +497315026155
Peter Benkart
Affiliation:
peter.benkart@microgan.com, MicroGaN GmbH, Albert-Einstein-Allee 45, Ulm, 89081, Germany
Ingo Daumiller
Affiliation:
ingo.daumiller@microgan.com, MicroGaN GmbH, Lise-Meitner-Strasse 13, Ulm, 89081, Germany
Mike Kunze
Affiliation:
mike.kunze@microgan.com, MicroGaN GmbH, Lise-Meitner-Strasse 13, Ulm, 89081, Germany
Ertugrul Sönmez
Affiliation:
ertugrul.soenmez@microgan.com, MicroGaN GmbH, Lise-Meitner-Strasse 13, Ulm, 89081, Germany
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Abstract

AlGaN /GaN HEMT structures were used for liquid and gas sensors. The sensitivity of pH sensors was determined after clean-in-place tests. A multigas measurement at 330°C is presented. A piezo-driven mechanical actor is demonstrated and used as a variable capacitor. GaN on silicon logic circuitry is demonstrated at 250°C.

Keywords

sensormicroelectro-mechanical (MEMS)III-V
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1068: Symposium C – Advances in GaN, GaAs, SiC and Related Alloys on Silicon Substrates , 2008 , 1068-C04-08
Copyright
Copyright © Materials Research Society 2008

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References

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