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Generation-Recombination Noise in a-Si:H Studied by Device Simulations

Published online by Cambridge University Press:  01 February 2011

J.P.R. Bakker ,
P.J.S. van Capel ,
B.V. Fine  and
J.I. Dijkhuis
J.P.R. Bakker
Affiliation:
Debye Institute/Atom Optics and Ultrafast Dynamics
P.J.S. van Capel
Affiliation:
Debye Institute/Atom Optics and Ultrafast Dynamics
B.V. Fine
Affiliation:
Spinoza Institute, Department of Physics and Astronomy, Utrecht University, P.O. Box 80000, 3508 TA Utrecht, the Netherlands
J.I. Dijkhuis
Affiliation:
Debye Institute/Atom Optics and Ultrafast Dynamics
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Abstract

An attempt is made to interpret low-frequency noise measured in a-Si:H n-i-n devices based on the assumption that the noise is due to generation-recombination (g-r) processes. The interpretation is based on a spatial distribution of recombination lifetimes of electrons obtained with the help from the AMPS-1D device simulation program. These lifetimes have the same order of magnitude as that of the noise observed. Further, a distribution of lifetimes naturally results from band bending. Simulations of noise spectra are obtained by multiplication of a phenomenological weight factor to the Lorentzian spectral contribution corresponding to the local electron lifetime. There are, however, two problems with this interpretation: (i) we were not able to come up with a reasonable noise description, where the relatively long electron lifetimes were not overshadowed by much shorter times (ii) the current description, where variance is included in a weight factor, is still incomplete, and therefore we can not explain the shape of the weight factor yet.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 715: Symposium A – Amorphous and Heterogeneous Silicon-Based Films-2002 , 2002 , A2.6
Copyright
Copyright © Materials Research Society 2002

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References

[1] Klaassen, F.M., van Vliet, K.M., Fassett, J.R., Phys. Chem. Solids 22, 391(1962).10.1016/0022-3697(61)90287-6Google Scholar
[2] Bosman, G., Zijlstra, R.J.J., Sol.-State El. 25, 273(1982).10.1016/0038-1101(82)90135-6Google Scholar
[3] Parman, C.E., Kakalios, J., Phys. Rev. Lett. 67, 2529(1991).10.1103/PhysRevLett.67.2529Google Scholar
[4] Verleg, P.A.W.E., Dijkhuis, J.I., Phys. Rev. B 58, 3904(1998).10.1103/PhysRevB.58.3904Google Scholar
[5] Bakker, J.P.R., Horst, B.J. van der, Dijkhuis, J.I., J. Non-Crys. Solids 299-302, 1256 (2001)Google Scholar
[6] for the manual visit http://www.psu.edu/dept/AMPS.Google Scholar
[7] Lee, K., Amberiadis, K., Ziel, A. van der, Sol.-State El. 25, 999(1982).10.1016/0038-1101(82)90023-5Google Scholar
[8] Vliet, K.M. van, Fassett, J.R., in Fluctuation phenomena in solids, edited by Burgess, R.E. (Academic press, New York, 1965), pp. 268–354.Google Scholar