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Germanium & Carbon Co-implantation for Enhanced Short Channel Effect Control in PMOS Devices

Published online by Cambridge University Press:  01 February 2011

Benjamin Dumont ,
Arnaud Pouydebasque ,
Bartek Pawlak ,
Benjamin Oudet ,
Dominique Delille ,
Frederic Milesi ,
Kader Souifi  and
Thomas Skotnicki
Benjamin Dumont
Affiliation:
benjamin.dumont@st.com, STMicroelectronics, Advanced Devices Module, 850, rue Jean Monnet, Crolles, N/A, 38926, France
Arnaud Pouydebasque
Affiliation:
arnaud.pouydebasque@philipscrolles.st.com, Philips Semiconductors, 850 rue Jean-Monnet, Crolles, N/A, 38926, France
Bartek Pawlak
Affiliation:
pawlak@imec.be, Philips Research, Kapeldreef 75, B-3001, Leuven, N/A, N/A, Belgium
Benjamin Oudet
Affiliation:
benjamin.oudet@st.com, STMicroelectronics, 850 rue Jean-Monnet, Crolles, N/A, 38920, France
Dominique Delille
Affiliation:
dominique.delille@philipscrolles.st.com, Philips Semiconductors, 850 rue Jean-Monnet, Crolles, N/A, 38926, France
Frederic Milesi
Affiliation:
MilesiFr@chartreuse.cea.fr, Ion Beam Services, ZI Peynier-Rousset, rue Gaston Imbert prolongée, Peynier, N/A, 13790, France
Kader Souifi
Affiliation:
abdelkader.souifi@insa-lyon.fr, LPM - INSA de Lyon, Bât. Blaise Pascal, 7, avenue Jean Capelle, Villeurbanne, N/A, 69621, France
Thomas Skotnicki
Affiliation:
thomas.skotnicki@st.com, STMicroelectronics, 850 rue Jean-Monnet, Crolles, N/A, 38920, France
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Abstract

This work demonstrates the efficiency of a Germanium and Carbon co-implantation that suppresses the Boron Transient Enhanced Diffusion, enhances Boron activation and enables large improvement of Short Channel Effects in PMOS devices while maintaining drive current performances. We present here 65/45nm node devices on conventional bulk substrates featuring Germanium and Carbon engineered shallow junctions that enable to reduce the Drain Induced Barrier Lowering compared to devices implanted only with Boron. This improvement is attributed to the suppression of Boron channelling with Ge pre-amorphization (PAI), and to the reduction of Boron TED due to the trapping of interstitial defects by Carbon with Germanium PAI.

Keywords

ion-implantationdiffusiondevices
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 912: Symposium C – Doping Engineering for Device Fabrication , 2006 , 0912-C01-05
Copyright
Copyright © Materials Research Society 2006

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References

1 , Shima, et al., IEDM 2003 Tech.Dig., pp.493–496 Google Scholar
2 , Oishi et al., VLSI 2004 Tech. Dig., pp.166–167 Google Scholar
3 Rükcer, H. et al., IEDM 1999 Tech.Dig., pp.345–348 Google Scholar
4 , Cacciato et al., Journal of Applied Physics March 1996 pp.2314–2325 Google Scholar
5 Gossmann, H.-J. et al., IEDM 1998 Tech. Dig., pp.725–728 Google Scholar
6 Pawlak, B.J. et al., submitted to IEDM 2005 Google Scholar
7 Osten, H.J. et al., IEEE Transactions on Electron Devices 1999, pp.1910–1911 Google Scholar
8 Ducroquet, F. et al., IEDM 2004 Tech. Dig., pp.437–440 Google Scholar
9 ITRS Technology Roadmap for Semiconductors 2003 http://public.itrs.netGoogle Scholar
10 , Al-Bayati et al., Ion Implantation Technology 2000, pp.54–61 Google Scholar
11 Skotnicki, T. et al., ECS 2002, MASTAR model is available on http://public.itrs.netGoogle Scholar
12 Ernst, T. et al., VLSI 2002 Tech. Dig. pp.92–93 Google Scholar