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GeSi Infrared Detectors Using Selective Deposition

Published online by Cambridge University Press:  15 February 2011

R. Strong ,
D. W. Greve  and
M. M. Weeks
R. Strong
Affiliation:
Electrical and Computer Engineering Dept., Carnegie Mellon University, Pittsburgh, PA
D. W. Greve
Affiliation:
Electrical and Computer Engineering Dept., Carnegie Mellon University, Pittsburgh, PA
M. M. Weeks
Affiliation:
RL/ERED, Rome Labs, 80 Scott Rd., Hanscom Air Force Base
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Abstract

Heterojunction p++ GeSi / Si internal photoemission (HIP) detectors deposited by ultra high vacuum chemical vapor deposition (UHV/CVD) were investigated as alternatives to silicide Schottky-barrier type detectors for infrared focal plane arrays. HIP structures were grown using SiH4, GeH4, and B2H6 source gases on (100) p- Si substrates patterned with thermal oxide windows. Selective epitaxy was maintained over a range of boron concentrations (6×1019 – 6.5×1020 cm-3) and Ge fractions (0.38–0.50), and a maximum selective thickness of ~300Å was determined for silicon growth at 550°C. These structures were fabricated into IR detectors using techniques compatible with standard Si focal plane array processing technology. Photoresponse data were analyzed according to the modified Fowler equation, indicating cut-off wavelengths of 5–12 (μm) and Cl values of 8–21 (%/eV) depending on sample parameters. I(V) characteristics were also measured at various temperatures, yielding electrical barrier heights consistent with optical measurements.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 402: Symposium H – Silicide Thin Films-Fabrication, Properties and Applications , 1995 , 443
Copyright
Copyright © Materials Research Society 1996

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