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Growth Mechanism of Epitaxial Oxide Films by Laser MBE

Published online by Cambridge University Press:  25 February 2011

Hirotoshi Nagata ,
Mamoru Yoshimoto ,
Tadashi Tsukahara ,
Satoshi Gonda  and
Hideomi Koinuma
Hirotoshi Nagata
Affiliation:
on leave from Central Research Laboratory, Sumitomo Cement Co. Ltd., Toyotomi-cho 585, Funabashi-shi, Chiba 274, Japan
Mamoru Yoshimoto
Affiliation:
The Research Laboratory of Engineering Materials, Tokyo Institute of Technology, Nagatsuta-cho 4259, Midori-ku, Yokohama-shi, Kanagawa 227, Japan
Tadashi Tsukahara
Affiliation:
The Research Laboratory of Engineering Materials, Tokyo Institute of Technology, Nagatsuta-cho 4259, Midori-ku, Yokohama-shi, Kanagawa 227, Japan
Satoshi Gonda
Affiliation:
The Research Laboratory of Engineering Materials, Tokyo Institute of Technology, Nagatsuta-cho 4259, Midori-ku, Yokohama-shi, Kanagawa 227, Japan
Hideomi Koinuma
Affiliation:
The Research Laboratory of Engineering Materials, Tokyo Institute of Technology, Nagatsuta-cho 4259, Midori-ku, Yokohama-shi, Kanagawa 227, Japan
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Abstract

Crystallographic structure and valence state of CeO2 and Nd2-O3 films deposited by laser MBE on Si substrates were investigated by reflection high energy electron diffraction (RHEED) and X-ray photoelectron spectroscopy (XPS). In contrast with epitaxial growth of CeO2 (111) and Nd2O3(111) on Si (111), epitaxial films were not obtained on Si(001). Partially reduced mixed valence (4+ and 3+) Ce was indicated to exist by XPS in the cerium oxide film within 2nm from the interface with Si. Beyond this transition layer, two-dimensional growth of CeO2 film on Si(111) was verified from in situ RHEED and as well as on Si(001) from XPS measurements.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 202: Symposium C – Evolution of Thin Film and Surface Microstructure , 1990 , 445
Copyright
Copyright © Materials Research Society 1991

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References

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