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Growth of Beta Silicon Carbide Film on Si by Hot-Filament CVD

Published online by Cambridge University Press:  21 February 2011

Zhang Rong ,
Shi Hongtao ,
Yu Shidong ,
Zheng Youdou ,
He Yuliang  and
Liu Xiangna
Zhang Rong
Affiliation:
Department of Physics, Nanjing University, Nanjing 210008, China
Shi Hongtao
Affiliation:
Department of Physics, Nanjing University, Nanjing 210008, China
Yu Shidong
Affiliation:
Department of Physics, Nanjing University, Nanjing 210008, China
Zheng Youdou
Affiliation:
Department of Physics, Nanjing University, Nanjing 210008, China
He Yuliang
Affiliation:
Department of Physics, Nanjing University, Nanjing 210008, China
Liu Xiangna
Affiliation:
Department of Physics, Nanjing University, Nanjing 210008, China
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Abstract

In this paper, we will report fabrication and structure study of single crystal β-SiC film on Si substrate by hot-filament chemical vapor deposition (HFC VD). The reaction sources are hydrogen-diluted methane(CH4) and Silane(SiH4). The wafer surface temperature is about 650°C. The typical growth rate is 200nm/h. Raman scattering spectrum shows a peak centering at 960cm-1 with a full width at half magnitude (FWHM) of 75cm-1. At room temperature, the photoluminescence spectrum gives a wide band at 580nm (2.2eV) with a FWHM of 55nm. Fourier transmission infrared (FT-IR) spectrum exhibits an absorption peak at 12.6 μm XRD and XPS analysis indicate that the epilayer is a stoichiometrical single crystal cubic silicon carbide film.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 339: Symposium D – Diamond, Silicon Carbide and Nitride Wide Bandgap Semiconductors , 1994 , 747
Copyright
Copyright © Materials Research Society 1994

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References

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