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Growth of Epitaxial 2H-silicon Carbide by Pulsed Laser Deposition

Published online by Cambridge University Press:  21 February 2011

Mark A. Stan ,
Martin O. Patton ,
Hemasiri K. M. Vithana ,
David L. Johnson ,
Joseph D. Warner ,
Nancy D. Piltch ,
Jinwei Yang  and
Pirouz Pirouz
Mark A. Stan
Affiliation:
Physics Department; Kent State University; Kent, Ohio 44242
Martin O. Patton
Affiliation:
Physics Department; Kent State University; Kent, Ohio 44242
Hemasiri K. M. Vithana
Affiliation:
Physics Department; Kent State University; Kent, Ohio 44242
David L. Johnson
Affiliation:
Physics Department; Kent State University; Kent, Ohio 44242
Joseph D. Warner
Affiliation:
NASA-Lewis Research Center; Cleveland, Ohio 44135
Nancy D. Piltch
Affiliation:
NASA-Lewis Research Center; Cleveland, Ohio 44135
Jinwei Yang
Affiliation:
Department of Materials Science, Case-Western Reserve University, Cleveland, Ohio 44106
Pirouz Pirouz
Affiliation:
Department of Materials Science, Case-Western Reserve University, Cleveland, Ohio 44106
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Abstract

Silicon carbide films have been grown on 6H-SiC (0001) and Si (001) wafers by laser ablation using an excimer laser. The films were deposited at heater plate temperatures between 970° C to 1270° C. Film composition, morphology and polytypism were determined by Auger electron spectroscopy, atomic force microscopy and high resolution transmission electron microscopy (TEM). In the course of these experiments growth of 2H-SiC on 6H-SiC was observed at the highest heater plate temperatures. Cross-sectional TEM images clearly show the symmetry of a film grown at 1270° C as c-axis oriented 2H-SiC containing columnar grains with average diameter of 20 nm and length of 100 nm.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 339: Symposium D – Diamond, Silicon Carbide and Nitride Wide Bandgap Semiconductors , 1994 , 423
Copyright
Copyright © Materials Research Society 1994

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References

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