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High Deposition Rate, Thick a-Si Films for Electrophotographic Applications

Published online by Cambridge University Press:  26 February 2011

J. Del Cueto ,
B. Von Roedern  and
A. Madan
J. Del Cueto
Affiliation:
Glasstech Solar, Inc. (GSI), 12441 West 49th Avenue, Wheatridge, Colorado 80033, U.S.A.
B. Von Roedern
Affiliation:
Glasstech Solar, Inc. (GSI), 12441 West 49th Avenue, Wheatridge, Colorado 80033, U.S.A.
A. Madan
Affiliation:
Glasstech Solar, Inc. (GSI), 12441 West 49th Avenue, Wheatridge, Colorado 80033, U.S.A.
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Extract

The attraction for amorphous Silicon based alloys (a-Si) stems in large part from its ease in its depositing uniformly over large areas in a cost effective manner. We here at Glasstech Solar, Inc. (GSI) wish to report on the development of a-Si films for electrophotographic applications. For this specific purpose we have developed thick films (˜30–40 μm) of intrinsic a-Si deposited on TCO at deposition rates of up to 14 Å/S We tested the material for its photoconductivity and breakdown voltage, and its suitability for the application at hand with one measured parameter, the 400 volt switching time, TΔ400. Essentially the goal consisted of developing a high voltage photoconductive switch, that would swing 400 volts at the terminals in a few μsec.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 95: Symposium E – Amorphous Silicon Semiconductors--Pure and Hydrogenated , 1987 , 659
Copyright
Copyright © Materials Research Society 1987

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