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High Performance A-Si:H Thin Film Transistors, TFTs: The Importance of Nitride Dielectrics with no Detectable Si-Si Bonding

Published online by Cambridge University Press:  16 February 2011

S.S. He  and
G. Lucovsky
S.S. He
Affiliation:
Department of Physics, Materials Science and Engineering, and Electrical and Computer Engineering, North Carolina State University, Raleigh, NC 27695–8202
G. Lucovsky
Affiliation:
Department of Physics, Materials Science and Engineering, and Electrical and Computer Engineering, North Carolina State University, Raleigh, NC 27695–8202
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Abstract

This research addresses silicon nitride dielectrics for a-Si:H TFTs. Si-Si bonds in these films detected by AES have been identified as the major factor that degrades the performance of the TFTs. With no detected Si-Si bonds in the silicon nitride and a relatively low concentration of Si-NH bonds, the TFTs show optimized performance.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 336: Symposium A – Amorphous Silicon Technology - 1994 , 1994 , 787
Copyright
Copyright © Materials Research Society 1994

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References

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