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Hot-Wire Chemical Vapor Deposition Epitaxy on Polycrystalline Silicon Seeds on Glass

Published online by Cambridge University Press:  01 February 2011

Charles W. Teplin ,
Howard M. Branz ,
Kim M. Jones ,
Manuel J. Romero ,
Paul Stradins  and
Stefan Gall
Charles W. Teplin
Affiliation:
Charles_Teplin@NREL.gov, NREL, NCPV, 1617 Cole Blvd, Golden, CO, 80401, United States, 303-384-6440, 303-384-7600
Howard M. Branz
Affiliation:
Howard_Branz@NREL.gov, NREL, NCPV, 1617 Cole Blvd, Golden, CO, 80401, United States
Kim M. Jones
Affiliation:
Kim_Jones@Nrel.gov, NREL, NCPV, 1617 Cole Blvd, Golden, CO, 80401, United States
Manuel J. Romero
Affiliation:
Manuel_Romero@NREL.gov, NREL, NCPV, 1617 Cole Blvd, Golden, CO, 80401, United States
Paul Stradins
Affiliation:
Pauls_Stradins@NREL.gov, NREL, NCPV, 1617 Cole Blvd, Golden, CO, 80401, United States
Stefan Gall
Affiliation:
gall@hmi.de, Hahn-Meitner-Institut Berlin, Kekuléstr. 5, D-12489, Berlin, N/A, Germany
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Abstract

During the last few years, hot-wire chemical vapor deposition (HWCVD) has been explored as a low-temperature process for epitaxially thickening c-Si seeds layers on low cost substrates. Here, we demonstrate HWCVD epitaxy on thin polycrystalline silicon seed layers on borosilicate glass substrates. The crystal Si seeds are large-grained (~10 µm) polycrystalline silicon that were fabricated by Al-induced crystallization of a-Si. We report the growth of 0.5 µm of epitaxy at ~670°C.

Keywords

photovoltaicSiepitaxy
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 989: Symposium A – Amorphous and Polycrystalline Thin-Film Silicon Science and Technology-2007 , 2007 , 0989-A06-16
Copyright
Copyright © Materials Research Society 2007

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