Hostname: page-component-745bb68f8f-b95js Total loading time: 0 Render date: 2025-01-15T06:51:18.928Z Has data issue: false hasContentIssue false
  • English
  • Français

Independent Tunneling Reductions Relative to Homogeneous Oxide Dielectrics From i) Nitrided Interfaces, and ii) Physically-Thicker Stacked Oxide/Nitride and Oxide/Oxynitride Gate Dielectrics

Published online by Cambridge University Press:  10 February 2011

Gerry Lucovsky ,
Yider Wu ,
Yi-Mu Lee ,
Hanyang Yang  and
Hiro Niimi
Gerry Lucovsky
Affiliation:
Department of Physics, North Carolina State University, Raleigh, NC 27695-8202 Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695-8202 Department of Electrical and Computer Engineering, North Carolina State University, Raleigh, NC 27695-8202
Yider Wu
Affiliation:
Department of Electrical and Computer Engineering, North Carolina State University, Raleigh, NC 27695-8202
Yi-Mu Lee
Affiliation:
Department of Electrical and Computer Engineering, North Carolina State University, Raleigh, NC 27695-8202
Hanyang Yang
Affiliation:
Department of Electrical and Computer Engineering, North Carolina State University, Raleigh, NC 27695-8202
Hiro Niimi
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695-8202
Get access

Abstract

Direct tunneling limits aggressive scaling of thermally-grown oxides to about 1.6 nm, a thickness at which the tunneling current. Jg, at one volt is ∼1 A/cm2. This paper presents results that demonstrate that stacked gate dielectrics prepared by remote plasma processing that include i) ultra-thin nitrided SiO2 interfacial layers, and ii) either silicon nitride or oxynitride bulk dielectrics can extend the equivalent oxide thickness, EOT, to 1.1-1.0 nm before Jg, > 1 A/cm2.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 592 , 1999 , 317
Copyright
Copyright © Materials Research Society 2000

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1.The National Roadmap for Semiconductor Technology (SIA, Santa Clara, CA, 1997).Google Scholar
2.Song, S.C., Luan, H.F., Chen, Y.Y., Gardner, M., Fulford, J., Allen, M. and Kwong, D.L., IEDM Tech. Dig. 373 (1998).Google Scholar
3.Tseng, H-S. et al. , IEDM Tech. Dig. 973 (1998).Google Scholar
4.Parker, C.R., Lucovsky, G. and Hauser, J.R., IEEE Electron Device Letters, 19, 106 (1998).Google Scholar
5.Wu, Y. and Lucovsky, G., Elec. Dev. Lett. EDL 19, 367 (1998).Google Scholar
6.Wilk, G. and Wallace, W.A.Appl. Phys. Lett. 74, 2854 (1999).Google Scholar
7.Wolfe, D.M. and Lucovsky, G., Mat. Res. Soc. Symp. Proc. 567. 343 (1999).Google Scholar
8.Chatterjee, A. et al. , IEDM Tech. Dig. 779 (1998)Google Scholar
9.Luan, H.F. et al. , IEDM Tech. Dig. 609 (1998)Google Scholar
10.Lucovsky, G., Wu, Y., Niimi, H., Misra, V. and Phillips, J.C., Appl. Phys. Lett. 74, 2005 (1999).Google Scholar
11.Misra, V., Wang, Z., Wu, Y., Niimi, H., Lucovsky, G., Wortman, J.J. and Hauser, J.R., J. Vac. Sci. Technol. B 17, 1836 (1999).Google Scholar
12.Niimi, H., Yang, H.Y. and Lucovsky, G., in Characterization and Metrology for ULSI Technology: 1998 International Conference, ed. by Seiler, D.G., Diebold, A.C., Bullis, W.M., Shaffner, T.J., McDonald, R. and Walters, E.J. (The American Institute of Physics, Woodbury, NY 1998), p. 273.Google Scholar
13.Ma, Y., Yasuda, T., and Lucovsky, G., J. Vac. Sci. Technol. A 11, 952 (1993); Y. Ma, T. Yasuda, S. Habermehl and G. Lucovsky, J. Vac. Sci. Technol. B 11, 1533 (1993); Y. Ma, and G. Lucovsky, J. Vac. Sci. Technol. B 12, 2504 (1994).Google Scholar
14.Hattangady, S.V., Niimi, H. and Lucovsky, G., J. Vac. Sci. Technol. A 14, 3017 (1996).Google Scholar
15.Yang, H.Y., Niimi, H. and Lucovsky, G., J. Appl. Phys. 83, 2327 (1998).Google Scholar
16.Keister, J.W., Rowe, J.E., Kolodzie, J.J., Niimi, H., Tao, N.-S., Madey, T.E. and Lucovsky, G., J. Vac. Sci. Technol. A 17, 1340 (1999).Google Scholar
17.Yang, H., Niimi, H., Keister, J.W., Lucovsky, G. and Rowe, Jack E., IEEE Electron Device Letters 21, 76 (2000).Google Scholar
18.Vogel, E.M., Ahmed, K.Z., Homung, B.Henson, W.K., McLarty, P.K., Lucovsky, G., Hauser, J.R. and Wortman, J.J., IEEE Trans. Elec. Dev. 45, 1350 (1998).Google Scholar
19.Lucovsky, G., Niimi, H., Koh, K, Lee, D.R. and Jing, Z., in The Physics ofSiO2 and Si-SiO2 Interfaces-3, ed. Massoud, H.Z., Poindexter, E.H. and Helms, C.R. (The Electrochemical Society, Pennington, NJ, 1996) p. 441.Google Scholar
20.Lucovsky, G., IBM J. Res. and Develop. 43, 301 (1999)Google Scholar
22.Gusev, E.P., Lu, H.-C., Garfunkel, E.L., Gustafson, T. and Green, M.L., IBM J. Res. and Develop. 43, 265 (1999).Google Scholar