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Interfacial Reactions Between Thin Films of Co and InP (100)

Published online by Cambridge University Press:  25 February 2011

M. Ben-Tzur ,
K. M. Yu  and
E. E. Haller
M. Ben-Tzur
Affiliation:
Cypress Semiconductor, 3901 North First St., San Jose, California 95134–1599
K. M. Yu
Affiliation:
Materials and Chemical Sciences Division, Lawrence Berkeley Laboratory, University of California, Berkeley, CA 94720
E. E. Haller
Affiliation:
Materials and Chemical Sciences Division, Lawrence Berkeley Laboratory, University of California, Berkeley, CA 94720
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Abstract

The interfacial reactions between thin films of Co and single crystal InP have been studied. The reaction between the Co and the InP substrate already start in the as-deposited state to form In and P rich compounds. During annealing at 250°C for 30 min., phase separation takes place. In addition to unreacted Co, we find Co rich compounds, a Co-P compound in contact with the substrate, and Co-In compound in contact with the metal layer. The general morphology appears to be stable up to 500°C. At higher temperatures (500–600°C) P is released from the substrate. CoP4, Co2P, CoIn2 and In were detected by X-ray diffraction. At this stage the reaction is no longer uniform.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 202: Symposium C – Evolution of Thin Film and Surface Microstructure , 1990 , 719
Copyright
Copyright © Materials Research Society 1991

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References

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