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Investigations of Plasma Immersion Ion Implantation Hydrogenation for Poly-Si Tfts Using an Inductively Coupled Plasma Source

Published online by Cambridge University Press:  15 February 2011

Yuanzhong Zhou ,
Shu Qin  and
Chung Chan
Yuanzhong Zhou
Affiliation:
Plasma Science and Microelectronics Laboratory, Department of Electrical and Computer Engineering, Northeastern University, Boston, MA 02115
Shu Qin
Affiliation:
Plasma Science and Microelectronics Laboratory, Department of Electrical and Computer Engineering, Northeastern University, Boston, MA 02115
Chung Chan
Affiliation:
Plasma Science and Microelectronics Laboratory, Department of Electrical and Computer Engineering, Northeastern University, Boston, MA 02115
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Abstract

A plasma immersion ion implantation (Pill) hydrogenation process using an inductively-coupled plasma (ICP) source is implemented for defect passivation in polycrystalline silicon (poly-Si) thin film transistors (TFT's). Device parameter improvement saturates in 4 minutes, which is considerably shorter than for other reported hydrogenation methods. Stress test indicates that the devices hydrogenated by this novel technique have much better long-term reliability. The hydrogenation effects on two types of trap states are analyzed the current-voltage characteristics of the devices. The densities of deep states and tail states are significantly reduced after short time hydrogenation.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 439: Symposium B – Microstructure Evolution During Irradiation , 1996 , 269
Copyright
Copyright © Materials Research Society 1997

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References

[1] Kamins, T. I. and Marcoux, P. J., “Hydrogenation of transistors fabricated in polycrystallinesilicon films,” IEEE Electron Device Left., vol.1, no. 8, pp. 159–161, 1980.Google Scholar
[2] Wu, I., Huang, T., Jackson, W. B., Lewis, A. G. and Chiang, A., “Passivation kinetics of two types of defects in polysilicon TFT by plasma hydrogenation,” IEEE Electron Device Lett., vol.12, no. 4, pp. 181–183, 1991.Google Scholar
[3] Ditzio, R. A., Liu, G., Fonash, S. J., Hseih, B. C. and Greve, D. W., “Short time electron cyclotron resonance hydrogenation of polycrystalline silicon thin film transistor structures,” Appl. Phys. Lett., vol.56, no. 123, pp. 1140–1142, 1990.Google Scholar
[4] Baert, K., Murai, H., Kobayashi, K., Namizaki, H. and Nunoshita, M., “Hydrogen passivation of polysilicon thin-film transistors by electron cyclotron resonance plasma,” Jpn. J Appl. Phys., vol.32, pp. 2601–2606, 1993.Google Scholar
[5] Bernstein, J. D., Qin, S., Chan, C., and King, T.-J., “Hydrogenation of Polycrystalline Silicon Thin Film Transistors by Plasma Ion Implantation,” IEEE Electron Device Lett., vol.16, no. 10, pp. 421–423, 1995.Google Scholar
[6] Qin, S., Bernstein, J. D., Zhou, Y., Liu, W., Chan, C. and King, T.-J., “Short-time Hydrogen Passivation of Poly-Si CMOS Thin Film Transistors by High Dose Rate Plasma Ion Implantation,” Mater. Res. Soc. Symp. Proc., vol.396, pp. 515–520, 1996 Google Scholar
[7] Cao, M., King, T.-J., and Saraswat, K. C., “Dtermination of the Densities of Gap States in Hydrogenated Polycrystalline Si and Si0.8 Ge0.2 Films', Appl. Phys. Left., vol.61, no. 6, pp. 672–674, 1992.Google Scholar
[8] Ono, K., Aoyama, T., Konishi, N., and Miyata, K., “Analysis of Current-Voltage Characteristics of Low- Temperature-Processed Polysilicon Thin Film Transistors”, IEEE Trans. on Electron Devices, vol.39, no. 4, pp. 792–802, 1992.Google Scholar
[9] Levinson, J., Shepherd, F. R., Scanlon, P. J., Westwood, W. D., Este, G., and Rider, M., Conductivity Behavior in Polycrystalline Semiconductor Thin Film Transistors,” J Appl. Phys., vol.53, no. 2, pp. 11931202, 1981.Google Scholar
[10] Ziegler, J. F., Biersack, J. P., and Littmark, U., The Stopping Range of Ions in Solids, Pergamon Press, New York, 1985.Google Scholar
[11] Nicollian, E. H. and Aucouturier, M., “Electron Spin Resonance of Hydrogenation Effects in Polycrystalline Silicon,” Appl. Phys. Lett., vol.49, pp. 1620, 1986.Google Scholar