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Kink Effect in Short Channel a-Si:H Thin-Film Transistors

Published online by Cambridge University Press:  21 February 2011

G. Fortunato ,
L. Mariucci ,
A. Mattacchini  and
A. Pecora
G. Fortunato
Affiliation:
IESS-CNR, Via Cineto Romano 42, 00156, ROMA, ITALY
L. Mariucci
Affiliation:
IESS-CNR, Via Cineto Romano 42, 00156, ROMA, ITALY
A. Mattacchini
Affiliation:
IESS-CNR, Via Cineto Romano 42, 00156, ROMA, ITALY
A. Pecora
Affiliation:
IESS-CNR, Via Cineto Romano 42, 00156, ROMA, ITALY
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Abstract

An avalanche increase of the drain current for high source-drain voltage (commonly called “kink effect”) has been observed for the first time in short-channel amorphous silicon thin-film transistors, fabricated using electron-beam lithography. This effect, caused by generation mechanisms at the drain junction, has been shown to be not only field but also temperature enhanced. The Frenkel-Poole mechanism is proposed in order to explain the data.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 258: Symposium A – Amorphous Silicon Technology – 1992 , 1992 , 961
Copyright
Copyright © Materials Research Society 1992

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References

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