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Laser Annealing of GaP and GaAs in High-Pressure Argon Gas Ambients

Published online by Cambridge University Press:  22 February 2011

Fumio Sato ,
Tadasu Sunada  and
Jun-ichi Chikawa
Fumio Sato
Affiliation:
NHK Broadcasting Science Research Laboratories, 1–10–11, Kinuta, Setagaya-ku, Tokyo, 157, Japan
Tadasu Sunada
Affiliation:
NHK Broadcasting Science Research Laboratories, 1–10–11, Kinuta, Setagaya-ku, Tokyo, 157, Japan
Jun-ichi Chikawa
Affiliation:
NHK Broadcasting Science Research Laboratories, 1–10–11, Kinuta, Setagaya-ku, Tokyo, 157, Japan
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Abstract

Pulsed laser annealing has been made for Te or Znimplanted GaP and Si-implanted GaAs in argon gas atmospheres in a pressure range of 1 to 1000 bar. Optical absorption measurement indicates that pulse annealing under pressures higher than 300 bar forms surface layers with a high crystallinity without appreciable evaporation of P or As. This pressure effect is discussed from the viewpoint of diffusion length of evaporated atoms during the annealing time.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 23 , 1983 , 645
Copyright
Copyright © Materials Research Society 1984

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References

REFERENCES

1.Brown, W.L. in: Laser and Electron-Beam Solid Interactions and Materials Processing Gibbons, J.F., Hess, L.D. and Sigmon, T.W., eds. (North Holland, New York 1981) p. 1.Google Scholar
2. For instance, see Gibbons, J.F., Hess, L.D. and Sigmon, T.W., Ref. [1].Google Scholar
3.White, C.W., Appleton, B.R., Stritzker, B., Zehner, D.M. and Wilson, S.R., in Ref. [1], p. 59.Google Scholar
4.Williams, J.S. and Harrison, H.B. in: Ref. [1], p. 209.Google Scholar
5.Lowndes, D.H., Cleland, J.W., Fletcher, J., Narayan, J., Westbrook, R.D., Wood, R.F., Christie, W.H. and Eby, R.E. in: Proceedings of the 15th IEEE Photovoltaic Specialists Conference (IEEE, New York 1981) p. 45.Google Scholar
6.Lowndes, D.H. and Feldman, B.J. in: Laser and Electron-Beam Interactions with Solids Appleton, B.R. and Celler, G.K. eds. (North Holland, New York 1982) p.689.Google Scholar
7.Inada, T., Tokunaga, K. and Taka, S., Appl. Phys. Lett. 34, 546 (1979).Google Scholar
8.Kulav, S.S., Sealy, B.J., Badawi, M.H., Stephens, G.K., Sadana, D. and Book, G.B., Electron. Lett. 15, 413 (1979).Google Scholar
9.Davies, D.E., Lorenzo, J.P., Kennedy, E.F. and Ryan, T.G. in: International Symposium on Gallium Arsenide and Related Compounds 1981, ed. Sugano, T. (Institute of Physics, London 1981) p. 389.Google Scholar
10.Sato, F., Sunada, T., and Chikawa, J., Materials Letters 1, 111 (1982).Google Scholar
11.Morita, M. and Sato, F. in: Proceeding of 3rd Symposium on Ultrasonic Electronics, Jpn. J. Appl. Phys. 22, Suppl. 22–3, p. 199 (1983).Google Scholar
12.Zehner, D.M., White, C.W., Appleton, B.R. and Ownby, G.W. in: Ref. 6, p. 683.Google Scholar
13.Chapman, S. and Cowling, T.G., Mathematical theory of Non-Uniform Gases, (Cambridge University Press, 1951), Second Edition.Google Scholar
14.Wood, R.F., Lowndes, D.H. and Christie, W.H. in: Ref. 1, p. 231.Google Scholar