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Laser Assisted E-Beam Epitaxial Growth of Si/Ge Alloys on Si

Published online by Cambridge University Press:  25 February 2011

Paul Martin Smith ,
S. Lombardo ,
M.J. Uttormark ,
Stephen J. Cook  and
Michael O. Thompson
Paul Martin Smith
Affiliation:
Department of Materials Science, Cornell University, Ithaca, NY 14853
S. Lombardo
Affiliation:
IMETEM, CNR, Dipartimento di Fisica, Corso Italia, 57, 195129, Catania, Italy.
M.J. Uttormark
Affiliation:
Department of Materials Science, Cornell University, Ithaca, NY 14853
Stephen J. Cook
Affiliation:
Department of Materials Science, Cornell University, Ithaca, NY 14853
Michael O. Thompson
Affiliation:
Department of Materials Science, Cornell University, Ithaca, NY 14853
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Abstract

A novel laser-assisted technique for e-beam epitaxial growth of Gex Si1−x alloys on <100> Si has been investigated. During deposition, a XeCl excimer laser is used to either heat, or to melt and crystallize, the Gex Si1−x continuously as the material is evaporated. This process of heating or melting and crystallizing can be continued until the desired film thickness is achieved. At incident laser energy densities which produce melt, the underlying crystalline seed ensures epitaxial growth during the subsequent solidification. Depositions of films up to 3 at.% Ge under this liquid regime, with substrates held nominally at room temperature, exhibited complete epitaxial growth. At energy densities below the melt threshold, enhanced surface mobility for epitaxial alignment is required. Depositions in this regime exhibit only partial epitaxial growth with conversion to fine grained polycrystalline growth after short distances.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 202: Symposium C – Evolution of Thin Film and Surface Microstructure , 1990 , 603
Copyright
Copyright © Materials Research Society 1991

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References

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