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Laser Incorporation of Silicon into GaAs-AlGaAs Heterostructures

Published online by Cambridge University Press:  21 February 2011

J. E. Epler ,
F. A. Ponce ,
J. C. Tramontana ,
F. J. Endicott  and
T. L. Paoli
J. E. Epler
Affiliation:
Xerox Palo Alto Research Center, 3333 Coyote Hill Road, Palo Alto, CA 94304
F. A. Ponce
Affiliation:
Xerox Palo Alto Research Center, 3333 Coyote Hill Road, Palo Alto, CA 94304
J. C. Tramontana
Affiliation:
Xerox Palo Alto Research Center, 3333 Coyote Hill Road, Palo Alto, CA 94304
F. J. Endicott
Affiliation:
Xerox Palo Alto Research Center, 3333 Coyote Hill Road, Palo Alto, CA 94304
T. L. Paoli
Affiliation:
Xerox Palo Alto Research Center, 3333 Coyote Hill Road, Palo Alto, CA 94304
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Abstract

Recently, a laser-scanning technique for patterning Si-induced layer disordering of GaAs-AlGaAs heterostructures has been reported. This process, called laserassisted disordering (LAD), has been successfully used to fabricate low threshold buried heterostructure lasers. In this report, the LAD process is studied in detail with scanning electron microscopy, transmission electron microscopy and secondary ion mass spectrometry. The results are discussed in the context of device fabrication.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 126: Symposium P – Advanced Surface Processes for Optoelectronics , 1988 , 77
Copyright
Copyright © Materials Research Society 1988

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References

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