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Laser-Induced Synthesis of Thin GeSe2 Films

Published online by Cambridge University Press:  22 February 2011

C. Antoniadis ,
M.C. Joliet ,
R. Andrew ,
L.D. Laude  and
M. Wautelet
C. Antoniadis
Affiliation:
I.R.I.S. Mons, Faculté des Sciences, Université de l'Etat, B-7000 Mons, Belgium.
M.C. Joliet
Affiliation:
I.R.I.S. Mons, Faculté des Sciences, Université de l'Etat, B-7000 Mons, Belgium.
R. Andrew
Affiliation:
I.R.I.S. Mons, Faculté des Sciences, Université de l'Etat, B-7000 Mons, Belgium.
L.D. Laude
Affiliation:
I.R.I.S. Mons, Faculté des Sciences, Université de l'Etat, B-7000 Mons, Belgium.
M. Wautelet
Affiliation:
I.R.I.S. Mons, Faculté des Sciences, Université de l'Etat, B-7000 Mons, Belgium.
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Abstract

Thin films of GeSe2 are synthesized by laser irradiation of Ge-Se sandwiches, with 2Se:IGe atomic proportion. The synthesized free-standing films are demonstrated to have the monoclinic crystal structure of GeSe2. Moreover, they exhibit a preferential orientation, with the c-axis perpendicular to the plane of the film. Films synthesized on glass substrate are characterized by an indirect optical energy gap of 2.3 eV, in agreement with published data on GeSe2. The melting point of Ge is not attained in the case of films on glass substrate.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 23 , 1983 , 753
Copyright
Copyright © Materials Research Society 1984

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References

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