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Low Resistance α-Ta Film For Large Area Electronic Devices

Published online by Cambridge University Press:  25 February 2011

Shigeru Yamamoto ,
Takehito Hikichi  and
Toshihisa Hamano
Shigeru Yamamoto
Affiliation:
Fuji Xerox, Hongo 2274 Ebina-shi Kanagawa, Japan
Takehito Hikichi
Affiliation:
Fuji Xerox, Hongo 2274 Ebina-shi Kanagawa, Japan
Toshihisa Hamano
Affiliation:
Fuji Xerox, Hongo 2274 Ebina-shi Kanagawa, Japan
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Abstract

A New method of the low resistivity α-Ta deposition technique has been developed. The sputtered Ta film deposited on TaMo alloy has bcc structure (α-Ta) in contrast to tetragonal of the Ta mono layer (β-Ta), and shows the resistivity as low as 22μΩ cm. The mechanism of this transformation is not explained by simple epitaxial growth. X-ray diffraction analysis and RBS analysis indicated that the TaMo alloy layer, due to Mo diffusion from the under layer, acts as a seed plane of growth. The Ta/TaMo layered film is suitable for Large Area Electronic devices for its low resistivity.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 181: Symposium B – Advanced Metallizations in Microelectronics , 1990 , 575
Copyright
Copyright © Materials Research Society 1990

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References

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