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The Mechanism of the Plasma Induced Deposition of a-Ge and μc-Ge from Germane: The limits and Possible Alternatives

Published online by Cambridge University Press:  16 February 2011

F. Glatz ,
R. Konwitschny ,
M.G.J. Vepřek-Heijman  and
S. Vepřek
F. Glatz
Affiliation:
Institute for Chemistry of Information Recording, Technical University Munich Lichtenbergstr. 4, D-85747 Garching/Munich, Germany
R. Konwitschny
Affiliation:
Institute for Chemistry of Information Recording, Technical University Munich Lichtenbergstr. 4, D-85747 Garching/Munich, Germany
M.G.J. Vepřek-Heijman
Affiliation:
Institute for Chemistry of Information Recording, Technical University Munich Lichtenbergstr. 4, D-85747 Garching/Munich, Germany
S. Vepřek
Affiliation:
Institute for Chemistry of Information Recording, Technical University Munich Lichtenbergstr. 4, D-85747 Garching/Munich, Germany
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Abstract

Time resolved mass spectrometry and the measurement of appearance potentials of various GeH -cationic fragments combined with selfconsistent theoretical modelling have been used to study the mechanism of plasma induced deposition of germanium. It is shown, that the high rate deposition occurs via germylene, GeH as the direct precursor. Digermane May play some role only at low deposition rates. Although we could reproduce the best values of theμτ product reported so far, no further improvement could be achieved.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 336: Symposium A – Amorphous Silicon Technology - 1994 , 1994 , 499
Copyright
Copyright © Materials Research Society 1994

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References

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