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Microstructural Characterization of Copper Thin Films on Metallic Underlayers

Published online by Cambridge University Press:  22 February 2011

E. M. Zielinski ,
R. P. Vinci  and
J. C. Bravman
E. M. Zielinski
Affiliation:
Department of Materials Science and Engineering, Stanford University, Stanford, CA 94305
R. P. Vinci
Affiliation:
Department of Materials Science and Engineering, Stanford University, Stanford, CA 94305
J. C. Bravman
Affiliation:
Department of Materials Science and Engineering, Stanford University, Stanford, CA 94305
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Abstract

Grain size distribution and texture of thin films of sputtered copper were characterized as a function of underlayer choice, deposition temperature and annealing temperature. For Cu deposited on Ta at room temperature and annealed at 100, 150, 200 and 250 °C, abnormal growth of the (100) orientation was observed for annealing temperatures above 150 °C, resulting in a bimodal grain size distribution. This orientation was also seen to grow abnormally for films deposited and annealed under identical conditions, but with a W underlayer. (100) growth for this case was observed at annealing temperatures as low as 100 °C. Abnormal grain growth was suppressed for Cu deposited on Ta at 150 °C and annealed to 250 °C. A bimodal grain size distribution was observed in a similar sample deposited on W under identical conditions, however, the abnormally growing orientation for this case was observed to be the (111) orientation, not the (100) orientation.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 338: Symposium – Materials Reliability in Microelectronics IV , 1994 , 307
Copyright
Copyright © Materials Research Society 1994

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References

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