Hostname: page-component-745bb68f8f-f46jp Total loading time: 0 Render date: 2025-01-15T06:45:54.820Z Has data issue: false hasContentIssue false
  • English
  • Français

Microstructural Evolution of AI/Ni and Ni/AI Bilayer Thin Films

Published online by Cambridge University Press:  25 February 2011

J. A. Barnard ,
E. Haftek ,
A. Waknis  and
M. Tan
J. A. Barnard
Affiliation:
The University of Alabama, Department of Metallurgical and Materials Engineering, Tuscaloosa, AL 35487–0202
E. Haftek
Affiliation:
The University of Alabama, Department of Metallurgical and Materials Engineering, Tuscaloosa, AL 35487–0202
A. Waknis
Affiliation:
The University of Alabama, Department of Metallurgical and Materials Engineering, Tuscaloosa, AL 35487–0202
M. Tan
Affiliation:
The University of Alabama, Department of Metallurgical and Materials Engineering, Tuscaloosa, AL 35487–0202
Get access

Abstract

The growth and microstructural evolution of Al/Ni and Ni/AI bilayer thin films have been investigated as a function of Al and Ni layer thickness and thermal treatment by transmission electron microscopy. Studies were also made of Al and Ni single layers of varying thickness. All films were grown by dc magnetron sputtering using carbon coated Cu TEM grids as substrates. For the bilayers, the Al thickness was fixed at either 3.5 or 7.0 nm while the Ni thickness was varied systematically from 3.2 to 12.8 nm. Deposition sequence significantly influenced bilayer microstructure even in as-deposited samples. Al/Ni bilayers generally exhibited a finer microstructure than Ni/AI. In the 3.5 nm Al/Ni bilayers no conclusive electron diffraction evidence was found for elemental Al while for the reverse sequence both Al and NiAl3 diffraction rings were found. In the 7.0 nm Al/Ni bilayers diffraction rings due to Al were observed. The reverse sequence again produced both Al and NiAl3 diffraction rings. Interestingly, diffraction rings due to the Ni layers were found for all samples but were consistently measured at positions corresponding to a 2.5–3.5% increase in interplanar spacing. Annealing at 385°C produced evidence for generalized grain growth and strong accentuation of the electron diffraction rings due to the NiAl3 phase. Again, deposition significantly influenced annealed bilayer microstructure. For the Al/Ni sequence annealing produced polycrystalline N1AI3 island-like structures, while for Ni/AI bilayers, annealing promoted the growth of small NiAl3 crystals uniformly distributed in the film.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 202: Symposium C – Evolution of Thin Film and Surface Microstructure , 1990 , 685
Copyright
Copyright © Materials Research Society 1991

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1] Ma, E., Nicolet, M-A., and Nathan, M., J. Appl. Phys. 65, 2703 (1989).Google Scholar
[2] Ruckman, M.W., Jiang, L., and Strongin, M., J. Vac. Sci. Technol. A 8, 134 (1990).Google Scholar
[3] Nastasi, M., Hung, L.S., and Mayer, J.W., Appl. Phys. Lett. 43, 831 (1983).Google Scholar
[4] Colgan, E., Nastasi, M., and Meyer, J.W., J. Appl. Phys. 58, 4125 (1985).Google Scholar
[5] Barrera, E.V., Ruckman, M.W., and Heald, S.M,.NTIS DE90004955 (1990)Google Scholar
[6] Barnard, J.A., Waknis, A., Haftek, E., and Tan, M., submitted for presentation at the Spring 1991 MRS Conference.Google Scholar