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More Insights into Band Gap Graded a-SiGe:H Solar Cells by Experimental and Simulated Data

Published online by Cambridge University Press:  15 February 2011

J. Zimmer ,
H. Stiebig ,
J. Fölsch ,
F. Finger ,
Th. Eickhoff  and
H. Wagner
J. Zimmer
Affiliation:
Forschungszentrum Jülich GmbH, ISI-PV, D-52425 Jülich, Germany
H. Stiebig
Affiliation:
Forschungszentrum Jülich GmbH, ISI-PV, D-52425 Jülich, Germany
J. Fölsch
Affiliation:
Forschungszentrum Jülich GmbH, ISI-PV, D-52425 Jülich, Germany
F. Finger
Affiliation:
Forschungszentrum Jülich GmbH, ISI-PV, D-52425 Jülich, Germany
Th. Eickhoff
Affiliation:
Forschungszentrum Jülich GmbH, ISI-PV, D-52425 Jülich, Germany
H. Wagner
Affiliation:
Forschungszentrum Jülich GmbH, ISI-PV, D-52425 Jülich, Germany
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Abstract

An experimental and numerical study of a-SiGe:H based solar cells with band gap graded i-layer in the shape of a ‘V’ is presented. The variation of the location of the band gap minimum has strong influence on the solar cell performance. Comparisons of experimental and simulated data of the dark IV-behavior, IV-curves under illumination and the quantum efficiency allow insights into the transport and recombination behavior within the solar cell. The simulations reveal that the position as well as the charge state of the defects determine the device characteristics.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 467: Symposium A – Amorphous and Microcrystalline Silicon Technology - 1997 , 1997 , 735
Copyright
Copyright © Materials Research Society 1997

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References

REFERENCES

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