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New Epitaxially Stabilized Silicide Phases

Published online by Cambridge University Press:  15 February 2011

S. Goncalves-Conto ,
E. Müller ,
K. Schmidt  and
H. Von Känel
S. Goncalves-Conto
Affiliation:
Laboratorium für Festkörperphysik, ETH Zürich, CH-8093 ZürichH, Switzerland
E. Müller
Affiliation:
Laboratorium für Festkörperphysik, ETH Zürich, CH-8093 ZürichH, Switzerland
K. Schmidt
Affiliation:
Institut für Schicht- und Ionentechnik 2, Forschungszentrum Jülich, D-52425 Jülich, Germany
H. Von Känel
Affiliation:
Laboratorium für Festkörperphysik, ETH Zürich, CH-8093 ZürichH, Switzerland
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Abstract

A new epitaxial CoSi2 phase has been synthesized on Si(111) by molecular beam epitaxy (MBE) at room temperature (RT). Structural investigations revealed, that films grown onto an ultrathin CoSi2 template crystallize with the CsC1 structure with 50% vacancies on the cation lattice. The same is true for codeposited films nucleating from the amorphous phase at very low annealing temperatures (100–200 °C). Upon annealing a gradual transition to the stable bulk phase with the CaF2 structure takes place. For films grown onto a template, some grains of (CsCl)Co0.5Si remain stable up to at least 550 °C, while the films grown without a template are fully transformed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 402: Symposium H – Silicide Thin Films-Fabrication, Properties and Applications , 1995 , 493
Copyright
Copyright © Materials Research Society 1996

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References

[1] Tung, R.T., Gibson, J. M., and Poate, J. M., Appl. Phys. Letters 42,888 (1983).Google Scholar
[2] Heenz, J., von Känel, H., Ospelt, M., and Wachter, P., Surf. Sci. 189/190, 1055 (1987).Google Scholar
[3] Tung, R. T., and Schrey, F., Appl. Phys. Letters 54, 852 (1989).Google Scholar
[4] von Känel, H., Mäder, K. A., Müller, E., Onda, N., and Sirringhaus, H., Phys. Rev. B 45, 13807 (1992).Google Scholar
[5] von Känel, H., Schwarz, C., Goncalves-Conto, S., Müller, E., Tavazza, L., and Malegori, G., Phys. Rev. Lett. 74, 1163 (1995).Google Scholar
[6] Zhang, S. L., Cardenas, J., d'Heurle, F. M., Svensson, B. G. and Petersson, C. S., Appl. Phys. Lett. 66, 58 (1995).Google Scholar
[7] von Känel, H., Mat. Sci. Rep. 8, 193 (1992).Google Scholar
[8] Schwarz, C., Onda, N., Goncalves-Conto, S., Sirringhaus, H., and von Känel, H., J. Appl. Phys. 76, 7256 (1994).Google Scholar
[9] von Känel, H., Onda, N., Sirringhaus, H., Müller-Gubler, E., Goncalves, S., and Schwarz, C., Appl. Surf. Sci. 70/71, 559 (1993).Google Scholar
[10] Cullity, B. D., Elements of X-Ray Diffraction, 2nd ed. (Addison-Wesley, MA, 1978), Chap. 4.Google Scholar
[11] von Känel, H., Müller, E., Goncalves-Conto, S., Schwarz, C., and Onda, N., Appl. Surf. Sc. (in press).Google Scholar
[12] Miglio, L., and Tavazza, F., in Silicide Thin Films-Fabrication, Properties and Applications, ed. Tung, R. T., Maex, K., Pellegrini, P. W., and Allen, L. H. (Mat. Res. Soc. Symp. Proc.)Google Scholar