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Non-melt Laser Thermal Annealing of Shallow Boron Implantation for Back Surface Passivation of Backside-Illuminated CMOS Image Sensors

Published online by Cambridge University Press:  20 June 2011

Zahra AIT FQIR ALI-GUERRY ,
Karim HUET ,
Didier DUTARTRE ,
Rémi BENEYTON ,
Daniel BENSAHEL ,
Philippe NORMANDON  and
Guo-Neng LU
Zahra AIT FQIR ALI-GUERRY
Affiliation:
STMicroelectronics, 850 rue Jean Monnet, 38920 Crolles, France Institut des Nanotechnologies Lyon (INL – site UCB), UMR 5270, Bât. Léon Brillouin, Université Lyon1, 43 bd du 11 novembre 1918, 69622 Villeurbanne Cedex, France
Karim HUET
Affiliation:
Excico, 13-21 Quai des Gresillons, 92230 Gennevilliers, France
Didier DUTARTRE
Affiliation:
STMicroelectronics, 850 rue Jean Monnet, 38920 Crolles, France
Rémi BENEYTON
Affiliation:
STMicroelectronics, 850 rue Jean Monnet, 38920 Crolles, France
Daniel BENSAHEL
Affiliation:
STMicroelectronics, 850 rue Jean Monnet, 38920 Crolles, France
Philippe NORMANDON
Affiliation:
STMicroelectronics, 850 rue Jean Monnet, 38920 Crolles, France
Guo-Neng LU
Affiliation:
Institut des Nanotechnologies Lyon (INL – site UCB), UMR 5270, Bât. Léon Brillouin, Université Lyon1, 43 bd du 11 novembre 1918, 69622 Villeurbanne Cedex, France
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Abstract

Back surface passivation is one of the major challenges in the backside illuminated sensor technology. Ion implantation followed by non-melt pulsed Laser Thermal Annealing (LTA) has been identified as a promising candidate to address this issue. In this work, a shallow B-doped layer is implanted at the backside, further activated using LTA in the non-melt regime. LTA process effectiveness in terms of crystal damage recovery as well as dopant diffusion and activation is studied through room-temperature photoluminescence, Secondary Ion Mass Spectroscopy and four-point probe sheet resistance. These studies demonstrate that non-melt LTA with multiple pulses induces high activation without visible diffusion with an effective curing of the implantation-induced crystalline defects. This is made possible thanks to a submicrosecond process timescale coupled to a reasonable number of shots as shown by thermal simulations and simple diffusion estimations.

Keywords

laser annealingion-implantationpassivation
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1321: Symposium A – Amorphous and Polycrystalline Thin-Film Silicon Science and Technology , 2011 , mrss11-1321-a06-14
Copyright
Copyright © Materials Research Society 2011

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References

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