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Nucleation and growth of thin (Ba,Sr)TiO3 films in a MOCVD reactor

Published online by Cambridge University Press:  11 February 2011

S. Regnery
Affiliation:
IFF Forschungszentrum Jülich, D-52425 Jülich, Germany Aixtron AG Aachen, Kackertstr. 15–17, D-52072 Aachen, Germany
Y. Ding
Affiliation:
IFF Forschungszentrum Jülich, D-52425 Jülich, Germany
P. Ehrhart
Affiliation:
IFF Forschungszentrum Jülich, D-52425 Jülich, Germany
F. Fitsilis
Affiliation:
IFF Forschungszentrum Jülich, D-52425 Jülich, Germany
C. L. Jia
Affiliation:
IFF Forschungszentrum Jülich, D-52425 Jülich, Germany
K. Szot
Affiliation:
IFF Forschungszentrum Jülich, D-52425 Jülich, Germany
R. Waser
Affiliation:
IFF Forschungszentrum Jülich, D-52425 Jülich, Germany
F. Schienle
Affiliation:
Aixtron AG Aachen, Kackertstr. 15–17, D-52072 Aachen, Germany
M. Schumacher
Affiliation:
Aixtron AG Aachen, Kackertstr. 15–17, D-52072 Aachen, Germany
T. McEntee
Affiliation:
Aixtron AG Aachen, Kackertstr. 15–17, D-52072 Aachen, Germany
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Abstract

(BaxSr1-x)TiO3 thin films were deposited on Pt electrodes in a planetary multi-wafer MOCVD reactor combined with a liquid delivery system. The nucleation behavior and the size of the stable nuclei were investigated by different SPM techniques and by XPS. Characteristic differences were observed between deposition temperatures of 565°C and 655°C, i.e. a homogeneous nucleation of small BST grains on the larger Pt grains (100 − 200 nm in-plane size) at low temperatures and a dominating nucleation at the grain boundaries at high temperatures. Further film growth was investigated for nominal film thickness between 5 and 100 nm and details of the grain structure are revealed by HRTEM, e.g., randomly oriented grains (typical in-plane size 10–20nm) with a high density of twins at 565°C and (100)-oriented defect free grains of slightly increased size at 655°C. As the electrical properties like permittivity and also leakage current depend on film thickness the final discussions of the electrical properties are based on thickness series and evaluated within the phenomenological dead layer model.

Type
Research Article
Copyright
Copyright © Materials Research Society 2003

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References

REFERENCES

[1] Kingon, A.I., Maria, J.P., and Streiffer, S.K., Nature 406, 1032 (2000)Google Scholar
[2] Summerfelt, S.R., in Thin film ferroelectric materials and devices, (Ramesh, R. ed., Kluwer 1999) p.142 Google Scholar
[3] Ehrhart, P., Fitsilis, F., Regnery, S., Jia, C.L., Waser, R., Schienle, F., Schumacher, M., Dauelsberg, M., Strzyzewski, P., Juergensen, H., MRS Proc. Vol. 655 p. CC9.4.1 (2001)Google Scholar
[4] Ehrhart, P., Fitsilis, F., Regnery, S., Waser, R., Schienle, F., Schumacher, M., Juergensen, H., and Krumpen, W., Integrated Ferroelectrics 45, 59 (2002)Google Scholar
[5] Schroeder, H., Schmitz, S., and Meuffels, P., Integrated Ferroelectrics 47, 197 (2002)Google Scholar