Hostname: page-component-745bb68f8f-v2bm5 Total loading time: 0 Render date: 2025-01-15T19:48:37.587Z Has data issue: false hasContentIssue false
  • English
  • Français

Numerical Analysis for Lateral Grain Growth of Poly-Si Thin Films Controlled by Laser-Induced Periodic Thermal Distribution

Published online by Cambridge University Press:  01 February 2011

Hirokazu Kaki ,
Yasunori Nakata  and
Susumu Horita
Hirokazu Kaki
Affiliation:
JAIST(Japan Advanced Institute of Science and Technology), Tatsunokuchi, Ishikawa 923-1292, Japan
Yasunori Nakata
Affiliation:
JAIST(Japan Advanced Institute of Science and Technology), Tatsunokuchi, Ishikawa 923-1292, Japan
Susumu Horita
Affiliation:
JAIST(Japan Advanced Institute of Science and Technology), Tatsunokuchi, Ishikawa 923-1292, Japan
Get access

Abstract

In order to obtain a large Si grain and to control the location of grain boundary in a Si film thermally melting-crystallized by pulse laser, we have proposed to use a periodic thermal distribution spontaneously induced by a linearly polarized laser beam. The lateral grain growth of polycrystalline Si thin films, which is controlled by the laser-induced periodic thermal distribution, was analyzed numerically by two-dimensional finite element computer simulations. From this analysis, it can be conclude that the laser irradiation should be performed to melt not all but most of Si film or melt it partially, making the large difference between the maximal and minimal temperature in the thermal distribution. It was also found that the temperature difference was increased with the optical absorption in the Si film and the fluence.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 715: Symposium A – Amorphous and Heterogeneous Silicon-Based Films-2002 , 2002 , A22.5
Copyright
Copyright © Materials Research Society 2002

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Sameshima, T., Usui, S., and Sekiya, M., IEEE Electron Device Lett. 7, 276 (1986).Google Scholar
2. Sera, K., Okumura, F., Uchida, H., Itoh, S., Kaneko, S., and Hotta, K., IEEE Electron Device Lett. 36, 2868 (1989).Google Scholar
3. Horita, S., Nakata, Y., and Shimoyama, A., Appl. Phys. Lett. 78, 2250 (2001).Google Scholar
4. Wood, R. F., and Geist, G. A., Phys. Rev. B 34, 2606 (1986).Google Scholar
5. Siegman, Anthony E., and Fauchet, Philippe M., IEEE J. Quantum Electron. QE 22, 1384 (1986).Google Scholar
6. Guosheng, Zhou, Fauchet, P. M., and Siegman, A. E., Phys. Rev. B 26, 5366 (1982).Google Scholar
7. wood, R. F., White, C. W., and Young, R. T., Semiconductors and Semimetals 23, Academic Press (1984).Google Scholar
8. Aichmayr, G., Toet, D., Mulato, M., Santos, P. V., Spangenberg, A., Christiansen, S., Albrecht, M., and Strunk, H. P., J. Appl. Phys. 85, 4010 (1999)Google Scholar