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Optical Modulation Spectroscopy of a-Si:H Based Multilayer Structures

Published online by Cambridge University Press:  26 February 2011

T. X. Zhou ,
H. Stoddart ,
Z. Vardeny ,
J. Tauc  and
B. Abeles
T. X. Zhou
Affiliation:
Department of Physics and Division of Engineering, Brown University, Providence, RI 02912
H. Stoddart
Affiliation:
Department of Physics and Division of Engineering, Brown University, Providence, RI 02912
Z. Vardeny
Affiliation:
Department of Physics and Division of Engineering, Brown University, Providence, RI 02912
J. Tauc
Affiliation:
Department of Physics and Division of Engineering, Brown University, Providence, RI 02912
B. Abeles
Affiliation:
Exxon Research and Engineering Company, Annandale, NJ 08801
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Abstract

Steady state optical modulation spectrum of a-Si:H/a-SiNx:H multilayer structure, its temperature dependence and time decay have been studied. For multilayers with very thin sublayers the onset of the spectrum is more gradual and occurs at higher energy than the spectrum for unlayered a-Si:H, indicating a broadening of the band tail. For larger layer thicknesses the optical modulation spectrum is compared to that for P-doped a-Si:H and interpreted as due to charged dangling bonds at the interfaces.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 77: Symposium D – Interfaces, Superlattices, and Thin Films , 1986 , 671
Copyright
Copyright © Materials Research Society 1987

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References

REFERENCES

[1] Taue, J., Festkoerperprobleme Vol. XXII, p. 85 (Vieweg, Braunschweig, 1982).Google Scholar
[2] Abeles, B. and Tiedje, T., Phys. Rev. Lett. 51, 2003 (1983).Google Scholar
[3] Ibaraki, N. and Fritzsche, H., Phys. Rev. B 30, 5791 (1984).CrossRefGoogle Scholar
[4] Roxlo, C. B. and Abeles, B., Phys. Rev. B 34, 2522 (1986).Google Scholar
[5] O'Connor, P. and Taue, J., Phys. Rev. B 25, 2748 (1982).Google Scholar
[6] Tiedje, T., Abeles, B. and Brooks, B. G., AIP Conf. Proc. #120 (edited by Taylor, P. C. and Bishop, S. G.), p. 417 (1984).Google Scholar
[7] Monroe, D., Phys. Rev. Lett. 54, 146 (1985).Google Scholar
[8] Dunstan, D. J. and Boulitrop, F., Phys. Rev. B 30, 5945 (1984).Google Scholar
[9] Maley, N. and Lanin, J. S., Phys. Rev. B 31, 5577 (1985).Google Scholar
[10] Chen, K. J. and Fritzsche, H., Bull. Am. Phys. Soc. 31, 333 (1985).Google Scholar
[11] Grahn, H. T., Stoddart, H. A., Zhou, T., Vardeny, Z., Taue, J. and Abeles, B., Proc. 18th Int. Conf. on the Physics of Semiconductors, Stockholm, 1986 (in press).Google Scholar
[12] Hirabayashi, I., Morigaki, K., Yamasaku, S. and Tanaka, K. in Ref. 6, p. 8.Google Scholar
[13] Zhou, T. X., Vardeny, Z. and Taue, J., to be published.Google Scholar
[14] Roxlo, C. B., Tiedje, T. and Abeles, B., in Ref. 6, p. 433.Google Scholar
[15] Street, R. A., Biegelsen, D. K. and Weisfield, R. L., Phys. Rev. B 30, 5861 (1984).Google Scholar