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Photoluminescence Characterization of Heteroepitaxial ZnSe/GaAs and ZnSe/AlAs Grown By MBE

Published online by Cambridge University Press:  26 February 2011

B. J. Skromme ,
M. C. Tamargo ,
J. L. De Miguel  and
R. E. Nahory
B. J. Skromme
Affiliation:
Bell Communications Research, 331 Newman Springs Rd., Red Bank, NJ 07701
M. C. Tamargo
Affiliation:
Bell Communications Research, 331 Newman Springs Rd., Red Bank, NJ 07701
J. L. De Miguel
Affiliation:
Bell Communications Research, 331 Newman Springs Rd., Red Bank, NJ 07701
R. E. Nahory
Affiliation:
Bell Communications Research, 331 Newman Springs Rd., Red Bank, NJ 07701
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Abstract

Heteroepitaxial ZnSe grown by molecular beam epitaxy (MBE) has been characterized using low temperature photoluminescence (PL) and reflectance. Excitonic PL linewidths of thick (relaxed) ZnSe layers are>1.4 meV, and depend little on the type of substrate or buffer layer used (e.g. GaAs or AlAs). In contrast, thin (pseudomorphic) ZnSe layers on AlAs buffer layers of moderate thickness are found to exhibit by far the sharpest (FWHM=0.22-0.37 meV) excitonic features ever observed for heteroepitaxial ZnSe grown by any technique. A tentative explanation for this result is that step-grading the lattice constant (by the AlAs buffer layer) has eliminated the crystal defects which produce localized strain fields that inhomogeneously broaden the peaks in ZnSe/GaAs. Acceptor-related PL peaks are discussed, and the first discrete donor-acceptor pair line spectrum in heteroepitaxial ZnSe is reported.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 102 , 1987 , 577
Copyright
Copyright © Materials Research Society 1988

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References

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