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Predictions on the Physical Properties of Amorphous Carbon-Tin Semiconducting Alloys: II Photoconductivity Properties

Published online by Cambridge University Press:  26 February 2011

Prosper Mpawenayo
Prosper Mpawenayo*
Affiliation:
Politecnico di Torino, Dipartimento di Fisica, C.so Duca degli Abruzzi, 24 - 10129 Torino (Italy)
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Abstract

It is intended to throw some high lights on the photoconductivity properties of narrow band semiconducting CSn alloys. The feasability, the structure and the usual optical properties of dielectric constants and optical gap have been predicted in a previous paper /1/. Starting with a number of well acknowledged models for semiconductors, properties, the values of the ratio between the light and the dark conductivities of a material having an o9tifal gap of 1.2 eV at 300 °K, under an illumination of 1016 photons cm−2s−1 are found between 1 and 103, but a density of gap states lower than 1018 cm−3 eV−1 is required.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 95: Symposium E – Amorphous Silicon Semiconductors--Pure and Hydrogenated , 1987 , 335
Copyright
Copyright © Materials Research Society 1987

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References

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