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Properties of Chemically Modified Carbon Nanotubes

Published online by Cambridge University Press:  26 February 2011

Ryotaro Kumashiro ,
Hirotaka Ohashi ,
Takeshi Akasaka ,
Yutaka Maeda ,
Shinya Takaishi ,
Masahiro Yamashita ,
Shigeo Maruyama ,
Takeshi Izumida ,
Rikizo Hatakeyama  and
Katsumi Tanigaki
Ryotaro Kumashiro
Affiliation:
rkuma@sspns.phys.tohoku.ac.jp, Tohoku University, aramaki aoba,, aoba-ku, sendai, miyagi, 980-8578, Japan
Hirotaka Ohashi
Affiliation:
ohashi@sspns.phys.tohoku.ac.jp, Tohoku University, Japan
Takeshi Akasaka
Affiliation:
akasaka@tara.tsukuba.ac.jp, University of Tsukuba, Japan
Yutaka Maeda
Affiliation:
ymaeda@u-gakugei.ac.jp, Tokyo Gakugei University
Shinya Takaishi
Affiliation:
takaishi@agnus.chem.tohoku.ac.jp, Tohoku University, Japan
Masahiro Yamashita
Affiliation:
yamashita@agnus.chem.tohoku.ac.jp, Tohoku University, Japan
Shigeo Maruyama
Affiliation:
maruyama@photon.t.u-tpkyo.ac.jp, University of Tokyo, Japan
Takeshi Izumida
Affiliation:
izumida@plasma.ecei.tohoku.ac.jp, Tohoku University, Japan
Rikizo Hatakeyama
Affiliation:
hatake@ecei.tohoku.ac.jp, Tohoku University, Japan
Katsumi Tanigaki
Affiliation:
tanigaki@sspns.phys.tohoku.ac.jp, Tohoku University, CREST-JST, Japan
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Abstract

Electric transport properties of chemically modificated carbon nanotubes (CNTs) using Si-containing organic molecules were investigated by means of the field effect transistors (FETs) technique. From the results of FET measurements, it was shown that p-type semiconducting CNTs can be converted to n-type ones by exohedral silylation. It is suggested that the electron carrier are doped into CNTs from the additional silyl groups, that is, the electronic properties of CNTs can be controlled by chemically modifications of outer surface.

Keywords

chemical reactionelectrical propertiesnanostructure
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 901: Symposium R – Assembly at the Nanoscale – Toward Functional Nanostructured Materials , 2005 , 0901-Rb21-05
Copyright
Copyright © Materials Research Society 2006

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