Hostname: page-component-78c5997874-m6dg7 Total loading time: 0 Render date: 2024-11-14T05:07:02.889Z Has data issue: false hasContentIssue false
  • English
  • Français

Properties of GaAsSb QW Heterostructures Having Various Barrier Materials Grown by Metalorganic Chemical Vapor Deposition

Published online by Cambridge University Press:  11 February 2011

Min Soo Noh ,
Jae Hyun Ryou ,
Ying-Lan Chang ,
Robert Weissman  and
Russell D. Dupuis
Min Soo Noh
Affiliation:
The University of Texas at Austin, Microelectronics Research Center, 10100 Burnet Road, Bldg. 160, Austin TX 78758
Jae Hyun Ryou
Affiliation:
The University of Texas at Austin, Microelectronics Research Center, 10100 Burnet Road, Bldg. 160, Austin TX 78758
Ying-Lan Chang
Affiliation:
Agilent Laboratories, Agilent Technologies Inc., 3500 Deer Creek Road, Palo Alto CA 94304
Robert Weissman
Affiliation:
Agilent Technologies Inc., 370 Trimble Road, San Jose CA 95131
Russell D. Dupuis
Affiliation:
The University of Texas at Austin, Microelectronics Research Center, 10100 Burnet Road, Bldg. 160, Austin TX 78758
Get access

Abstract

Pseudomorphic GaAs1-xSbx quantum-well (QW) structures grown on GaAs substrates by metalorganic chemical vapor deposition (MOCVD) have been studied with various barrier materials to investigate the energy band lineup. To determine the band lineup of these structures, we have performed low-temperature current-dependent cathodoluminescence (LT-CL) measurements at 10K. For the structure with GaAs barriers, the data show strong evidence of Type-II staggered band lineup, which means that holes are confined in the valence band heavy-hole level of the GaAs1-xSbx quantum well and electrons are confined in the conduction band of the GaAs barrier.

For the InGaP barriers, however, we observed only one peak that is related to transitions of a Type-I band lineup. From the LT-CL results, we find that the valence-band discontinuity ratio (Qv) between the GaAs0.73Sb0.27 double quantum wells (DQWs) and the GaAs barriers is ∼1.20. Furthermore, to improve the carrier confinement, we propose that InGaP barriers provide a Type-I band lineup with the GaAsSb QW.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 744: Symposium M – Progress in Semiconductors II–Electronic and Optoelectronic Applications , 2002 , M4.6
Copyright
Copyright © Materials Research Society 2003

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Anan, T., Yamada, M., Nishi, K., Kurihara, K., Tokutome, K., Kamei, A., and Sugou, S., Electron. Lett. 37, 566 (2001).Google Scholar
2. Yamada, M., Anan, T., Tokutome, K., Kamei, A., Nishi, K., and Sugou, S., IEEE Photonics Technol. Lett. 12, 774 (2000).Google Scholar
3. Quochi, F., Cunningham, J. E., Dinu, M., and Shah, J., “Room temperature operation of GaAsSb /GaAs quantum well VCSELs at 1.29 μm,” Electron. Lett. 36, 2075 (2000).Google Scholar
4. Ji, G., Agarwala, S., Huang, D., and Morkoc, H., Phy. Rev. B 38, 10571 (1988).Google Scholar
5. Tessier, R., Sicault, D., Harmand, J. C., Ungaro, G., Le Roux, G., and Largeau, L., J. Appl. Phys. 89, 5473 (2001).Google Scholar
6. Peter, M., Forker, J., Winkler, K., Bachem, K. H., and Wagner, J., J. Electron. Mater. 24, 1551 (1995).Google Scholar