Hostname: page-component-745bb68f8f-l4dxg Total loading time: 0 Render date: 2025-01-15T06:42:53.910Z Has data issue: false hasContentIssue false
  • English
  • Français

Pulsed Laser Deposition of CdTe, HgCdTe, and β-SiC Thin Films on Silicon

Published online by Cambridge University Press:  25 February 2011

D.B. Fenner ,
O. Li ,
P.W. Morrison ,
J. Cosgrove ,
L. Lynds ,
M.E. Johansson ,
B.R. Stoner ,
J.T. Glass ,
Peirong Xu  and
Hong Zhang
D.B. Fenner
Affiliation:
Advanced Fuel Research, Inc., East Hartford, CT
O. Li
Affiliation:
Advanced Fuel Research, Inc., East Hartford, CT
P.W. Morrison
Affiliation:
Advanced Fuel Research, Inc., East Hartford, CT
J. Cosgrove
Affiliation:
Advanced Fuel Research, Inc., East Hartford, CT
L. Lynds
Affiliation:
Advanced Fuel Research, Inc., East Hartford, CT
M.E. Johansson
Affiliation:
Advanced Fuel Research, Inc., East Hartford, CT
B.R. Stoner
Affiliation:
Dept. Mat. Sci. Eng., North Carolina State Univ., Raleigh, NC
J.T. Glass
Affiliation:
Dept. Mat. Sci. Eng., North Carolina State Univ., Raleigh, NC
Peirong Xu
Affiliation:
Dept. Materials Science, Northwestern Univ., Evanston, IL
Hong Zhang
Affiliation:
Dept. Materials Science, Northwestern Univ., Evanston, IL
Get access

Abstract

The successful methods for laser ablation and deposition of epitaxial thin films of metal oxides, especially the high-temperature superconductors (HTSC), have been adapted to pulsed laser deposition (PLD) of the narrow-band compound semiconductor HgCdTe, and the wide-band semiconductor β-SiC. Useful film quality is readily obtained in both cases: the HgCdTe films on CdTe wafers function in IR photodetection and the 3-SiC is epitaxial on both Si (100) and (111) wafers.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 268: Symposium K – Materials Modification by Energetic Atoms and Ions , 1992 , 235
Copyright
Copyright © Materials Research Society 1992

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Fork, D.K., Fenner, D.B., Barton, R.W., Phillips, J.M., Connell, G.A.N., Boyce, J.B. and Geballe, T.H., Appl. Phys. Left. 57, 1161 (1990)Google Scholar
2. Fork, D.K., Fenner, D.B., Connell, G.A.N., Philips, J.M., and Geballe, T.H., Appl. Phys. Lett. 57, 1137 (1990).CrossRefGoogle Scholar
3. Fork, D.K., Ponce, F.A., Tramontana, J.C., and Geballe, T.H., Appl. Phys. Lett. 58, 2294 (1991).Google Scholar
4. Kwok, H.S., Zheng, J.P., Witanachchi, S., Shi, L., and Shaw, D.T., Appl. Phys. Left. 52, 1815 (1988).CrossRefGoogle Scholar
5. Cheung, J.T., and Sankur, H., Mat. Res. Soc. Symp. Proc. 191, 11 (1990). J.T. Cheung, and J-S. Chen, Appl. Phys. Lett. 53, 2191 (1988).Google Scholar
6. Balooch, M., Tench, R.J., Siekhaus, W.J., Allen, M.J., Connor, A.L., and Olander, D.R., Appl. Phys. Left. 57, 1540 (1990).Google Scholar
7. Rimai, L., Ager, R., Logothetis, E.M., Weber, W.H., and Hangas, J., Appl. Phys. Left. 59, 2266 (1991).Google Scholar
8. Krishnaswamy, J., Rengan, A., Narayan, J., Vedam, K., and McHargue, C.J., Appi. Phys. Left. 54, 2455 (1989).Google Scholar
9.Supplied by Biegelsen, D.K. and Krusor, B.S., Xerox Palo Alto Research Center.Google Scholar