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Rapid Photoluminescence Intensity Degradation in Porous Silicon

Published online by Cambridge University Press:  28 February 2011

P. Basmaji ,
A. A. Bernussi ,
J. C. Rossi  and
B. Matvienko
P. Basmaji
Affiliation:
IFQSC - USP - 13560 - São Carlos - SP -, Brazil
A. A. Bernussi
Affiliation:
CPqD - Telebras - 13085 - Campinas - SP -, Brazil
J. C. Rossi
Affiliation:
IFQSC - USP - 13560 - São Carlos - SP -, Brazil
B. Matvienko
Affiliation:
IFQSC - USP - 13560 - São Carlos - SP -, Brazil
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Abstract

Rapid photoluminescence intensity degradation are observed in porous silicon layers formed at different preparation conditions. The decay rate, ranging from 0.5 to tens of seconds, is found to be a function of illumination intensity, sample temperature and emission wavelength. We attributed the degradation effect to photochemical reactions on the surface.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 283: Symposium F – Microcrystalline Semiconductors–Materials Science and Devices , 1992 , 233
Copyright
Copyright © Materials Research Society 1993

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References

REFERENCES

1. Canham, L.T., Appl. Phys. Lett. 57, 1046 (1990).Google Scholar
2. Smith, R.L. and Collins, S.D., J. Appl. Phys. 71, R1 (1992).Google Scholar
3. Koshida, N. and Koyama, H., Appl. Phys. Lett. 60, 347 (1992).Google Scholar
4. Bsiesy, A., Vial, J.C., Gaspard, F., Herino, R., Ligeon, M., Muller, F., Wasiela, A., Halimaoui, A. and Bomchil, G., Surf. Sci. 254, 195 (1991).Google Scholar
5. Vial, J.C., Bsiesy, A., Gaspard, F., Hérino, R., Muller, F., Romestain, R. and Macfarlane, R.M., Phys. Rev. B45, 14171 (1992).Google Scholar
6. Prokes, S.M., Glembocki, O.J., Bermudez, V.M., Kaplan, R., Friedersdorf, L.E. and Searson, P.C.; Phys. Rev. B45, 13788 (1992).Google Scholar
7. Suemune, I., Noguchi, N. and Yamanishi, M., Jpn. J. Appl. Phys. 31, L 494 (1992).Google Scholar
8. Tischler, M.A., Collins, R.T., Stathis, J.H. and Tsang, J.C., Appl. Phys. Lett. 60, 639 (1992).Google Scholar
9. Schreiber, J., Hildebrandt, S., Kircher, W. and Richter, T., Mater. Sci. and Eng. 31 B9, (1991).Google Scholar
10. Collins, R.T., Tischler, M.A. and Stathis, J.H., Appl. Phys. Lett. 61, 1649 (1992).Google Scholar