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Reactive Sputtering Deposition of Titanium Oxide Films By Means of An RF Triode Sputtering Source

Published online by Cambridge University Press:  28 February 2011

Toru Yamashita ,
J. W. Robinson  and
H. Yamauchi
Toru Yamashita
Affiliation:
Department of Engineering Materials, University of Windsor, Windsor, Ontario, Canada, N9B 3P4.
J. W. Robinson
Affiliation:
Department of Engineering Materials, University of Windsor, Windsor, Ontario, Canada, N9B 3P4.
H. Yamauchi
Affiliation:
Department of Engineering Materials, University of Windsor, Windsor, Ontario, Canada, N9B 3P4.
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Abstract

TiOx thin films were fabricated by means of a reactive sputtering technique in an rf triode sputtering-deposition unit. The deposition rate was studied in detail. A ‘phase diagram’ of TiOx was determined. XPS study showed the formation of a Ti02 surface layer on TiOx thin films. Oxygen was removed by the Ar+ bombardment on Ti02 to yield Ti203.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 60: Symposium L – Defect Properties and Processing of High-Technology Nonmetallic Materials , 1985 , 373
Copyright
Copyright © Materials Research Society 1986

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