Hostname: page-component-745bb68f8f-b95js Total loading time: 0 Render date: 2025-01-15T06:43:18.316Z Has data issue: false hasContentIssue false
  • English
  • Français

Recombination Processes of the Broadband And 1.681 Ev Optical Centers in Diamond Films

Published online by Cambridge University Press:  21 February 2011

L. Bergman ,
M. T. Mcclure ,
J. T. Glass  and
R. J. Nemanich
L. Bergman
Affiliation:
Department of Physics and Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695–8202
M. T. Mcclure
Affiliation:
Department of Physics and Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695–8202
J. T. Glass
Affiliation:
Department of Physics and Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695–8202
R. J. Nemanich
Affiliation:
Department of Physics and Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695–8202
Get access

Abstract

Micro- and Macro-photoluminescence techniques were employed in this research to investigate the role of nitrogen-doping on the optical spectra of chemical vapor deposited diamond films and to determine whether the origin of the broadband luminescence is due to vibronic interaction of the nitrogen centers. The temperature behavior of the broadband PL and of the 1.681 eV silicon related optical center were analyzed. The intensity of the broadband was found to exhibit a temperature dependence characteristic of optical emission from a continuous distribution of gap states while the temperature dependence of the 1.681 eV band followed the Boltzmann quenching process.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 339: Symposium D – Diamond, Silicon Carbide and Nitride Wide Bandgap Semiconductors , 1994 , 663
Copyright
Copyright © Materials Research Society 1994

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Freitas, J.A. Jr, Butler, J.E., and Strom, U., J. Mater. Res. 5, 2502 (1990).Google Scholar
2. Bergman, L., Stoner, B.R., Turner, K.F., Glass, J.T., and Nemanich, R.J., J. Appl. Phys. 73, 3951 (1993).Google Scholar
3. Collins, A.T. and Lawson, S.C., J. Phys.: Condens. Matter 1, 6929 (1989).Google Scholar
4. Davies, G. and Hamer, M.F., Proc. R. Soc. Lond. A. 348, 285 (1976).Google Scholar
5. Pereira, M.E., Jorg, M.I., and Thomaz, M.F., J. Phys. C: Solid State Phys. 19, 1009 (1986).Google Scholar
6. Robertson, J., Advances In Physics 35, 317 (1986).Google Scholar
7. Fang, R.C., J. Lumin. 48/49, 631 (1991).Google Scholar
8. Mott, N.F. and Davis, E.A., Electronic Processes in Non-Crystalline Materials (Clarendon Press, Oxford, 1979).Google Scholar
9. Collins, A.T., Kamo, M., and Sato, Y., J. Mater. Res. 5, 2507 (1990).Google Scholar
10. Davies, Gordon, Chemistry and Physics of Carbon 13, 2 (1977).Google Scholar
11. Davies, Gordon, Rep. Prog. Phys. 44, 787 (1981).Google Scholar
12. Curie, D., Luminescence in Crystals (John Wiley and Sons, 1963).Google Scholar
13. Street, R.A., Advances in Physics 30, 593 (1981).Google Scholar
14. Painter, G.S. and Ellis, D.E., Phys. Rev. B 12, 4747 (1970).Google Scholar