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Selective Aluminum CVD on Si(100) From DMAH

Published online by Cambridge University Press:  15 February 2011

C. Bisch ,
S. Rogge ,
T. Mélin  and
G.C.A.M. Janssen
C. Bisch
Affiliation:
Delft University of Technology, Dept. of Applied Physics, DIMES, Delft, THE NETHERLANDS, e-mail:bisch@cerberus.dimes.tudelft.nl
S. Rogge
Affiliation:
Delft University of Technology, Dept. of Applied Physics, DIMES, Delft, THE NETHERLANDS
T. Mélin
Affiliation:
Delft University of Technology, Dept. of Applied Physics, DIMES, Delft, THE NETHERLANDS
G.C.A.M. Janssen
Affiliation:
Delft University of Technology, Dept. of Applied Physics, DIMES, Delft, THE NETHERLANDS
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Abstract

The influence of the dose on the crystal growth and on the selectivity of the Al-CVD process has been studied. Doses were varied from 100 L to 18000 L. Selective deposition was observed, both on passivated Si vs. SiO2, as well as on bare Si vs. passivated Si. On oxide elongated crystals have been deposited with dimensions of 1200 × 60 × 60 nm.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 580: Symposium E – Nucleation & Growth Processes in Materials , 1999 , 141
Copyright
Copyright © Materials Research Society 2000

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References

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