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Selective Chemical Vapor Growth of Carbon Nanotubes for Application of Electronic-Measuring Nano-Probes

Published online by Cambridge University Press:  26 February 2011

Hiroki Okuyama ,
Nobuyuki Iwata  and
Hiroshi Yamamoto
Hiroki Okuyama
Affiliation:
okuyama@mxh.mesh.ne.jp, Nihon University, College of Science and Technology, 7-24-1-401 Narashinodai, Funabashi, N/A, 274-8501, Japan, +81-47-469-5457, +81-47-469-5457
Nobuyuki Iwata
Affiliation:
iwata@ecs.cst.nihon-u.ac.jp, Nihon University, College of Science and Technology, Japan
Hiroshi Yamamoto
Affiliation:
hyama@ecs.cst.nihon-u.ac.jp, Nihon University, College of Science and Technology, Japan
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Abstract

Selectively grown carbon nanotubes (CNTs) and/or vertically aligned CNTs (VACNTs) on patterned metal electrodes have been prepared for applications to a novel electronic-measuring nano-probe. We propose newly a position-controlling method of CNTs by controlling not only a position of catalysts but also the thickness of metal underlayers for the catalysts. The selective growth of CNTs was achieved at edges of the metal pattern by thermal chemical vapor deposition. The width of selectively grown CNTs was minimized, about 2.6 µm. The width was about 80 times as small as that of the metal pattern. VACNTs were synthesized by a plasma enhanced CVD method in which the high electric field in a cathode dark space was applied to the substrates. The VACNTs grew up, however, all over the metal pattern.

Keywords

Cnanoscalechemical vapor deposition (CVD) (chemical reaction)
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 901: Symposium R – Assembly at the Nanoscale – Toward Functional Nanostructured Materials , 2005 , 0901-Ra22-25-Rb22-25
Copyright
Copyright © Materials Research Society 2006

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References

1 Kong, J., Yenilmez, E., Tombler, T. W., Kim, W., Dai, H., Laughlin, R. B., Liu, L., Jayanthi, C. S. and Wu, S. Y., Phys. Rev. Lett. 87, 106801 (2001)Google Scholar
2 Yao, Z., Kane, C. L. and Dekker, C., Phys. Rev. Lett. 84, 2941 (2000)Google Scholar
3 Dupuis, A. C., Prog. Mater. Sci. 50, 929 (2005)Google Scholar
4 Merkulov, V. I., Melechko, A. V., Guillorn, M. A., Lowndes, D. H. and Simpson, M. L., Appl. Phys. Lett. 79, 2970 (2001)Google Scholar
5 Wong, E. W., Sheehan, P. E. and Lieber, C. M., Science, 277, 1971 (1997)Google Scholar