Hostname: page-component-745bb68f8f-mzp66 Total loading time: 0 Render date: 2025-01-15T07:15:35.745Z Has data issue: false hasContentIssue false
  • English
  • Français

Semiconductor Processing with Excimer Lasers: An Overview

Published online by Cambridge University Press:  22 February 2011

R. T. Young
R. T. Young*
Affiliation:
Helionetics, Inc., San Diego, California 92123 and Solid State Division, Oak Ridge National Laboratory Oak Ridge, Tennessee 37831
Get access

Abstract

The present level of development of excimer lasers, as it relates to semiconductor processing, and the advantages of these lasers for such processing, are reviewed. Extensive comparisons of the quality of annealing of ion-implanted Si obtained with XeCl and ruby lasers are presented. Major applications in the area of solar cell fabrication, siliconon-sapphire technology, laser photochemical processing, and submicron optical lithography are outlined and discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 23 , 1983 , 217
Copyright
Copyright © Materials Research Society 1984

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1.Stevens, B., Hutton, E., Nature 186, 1045 (1960).Google Scholar
2.Birk, J. B., Org. Mol. Photophys. 2, 409 (1975).Google Scholar
3.Beens, H., Weller, A., Org. Mol. Photophys. 2, 159 (1975).Google Scholar
4.Bran, C. A. and Ewing, J. J., Appl. Phys. Lett. 27, 435 (1975).Google Scholar
5.Searles, S. K. and Hart, G. H., Appl. Phys. Lett. 27, 243 (1975).Google Scholar
6.Burnham, R., Harris, N. W., and Djeu, N., Appl. Phys. Lett. 28, 86 (1976).Google Scholar
7.Lin, S. C. and Levatter, J. I., Appl. Phys. Lett. 34, 505 (1979).Google Scholar
8.Levatter, J. I. and Lin, S. C., J. Appl. Phys. 51, 210 (1980).Google Scholar
9.Young, R. T., van der Leeden, G. A., Narayan, J., Christie, W. H., Wood, R. F., Rothe, D. E., and Levatter, J. I., IEEE Elect. Dev. Lett. EDL–3, 280 (1982).Google Scholar
10.Young, R. T., Narayan, J., Christie, W. H., van der Leeden, G. A., Levatter, J. I., and Cheng, L. J., Solid State Tech. 26, 183 (1983).Google Scholar
11. See for example, Laser Diagnostics and Photochemical Processing for Semiconductor Devices, ed. by Osgood, R. M., Brueck, S. R. J., Schlossberg, H. R. (North-Holland, New York, 1982).Google Scholar
12.Jain, K., Wilson, C. G., Lin, B. J., IEEE Elect. Dev. Lett. EDL–3, 53 (1982).Google Scholar
13.Leamy, H. J., Rozgonyi, G. A., Sheng, T. T., Celler, G. K., Appl. Phys. Lett. 32, 535 (1978).Google Scholar
14.Oron, M. and Sorenson, G., Appl. Phys. Lett. 35, 782 (1979).Google Scholar
15. See for example, Kimerling, K. C., Benton, J. L. in “Laser and Electron Beam Processing of Materials,” edited by White, C. W. and Peercy, P. S. (Academic Press, New York, 1980), p. 385;Google Scholar
Mooney, P. M., Young, R. T., Karins, J., Lee, Y. K., Corbett, J. W., Phys. Status Solidi A 48, K31 (1981).Google Scholar
16.Wood, R. F. (private communication).Google Scholar
17.Young, R. T., van der Leeden, G. A., Sandstrom, R. L., Wood, R. F., and Westbrook, R. D., Appl. Phys. Lett. 43, 666 (1983).Google Scholar
18.Gupta, A., Chi, Y. M., Valdez, J. B., Olson, G. L., and Hess, L. D., IEEE Trans. Nucl. Sci. NS–28, 4080 (1981).Google Scholar
19.Kobayashi, Y., Nakamura, M., and Suzuki, T., Appl. Phys. Lett. 40, 1040 (1982).Google Scholar
20.Deutsh, T. F., Ehrlich, D. J., and Osgood, R. M. Jr., Appl. Phys. Lett. 35, 175 (1979).Google Scholar
21.Ehrlich, D. J., Osgood, R. M. Jr., and Deutsh, T. F., J. Vac. Sci. Tech. 21, 23 (1982).Google Scholar
22.Srinivasan, R. and Wayne-Banton, V., Appl. Phys. Lett. 41, 576 (1982).Google Scholar