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Solar Cells from Mixed SiCi2H2 and SiH4 Plasmas

Published online by Cambridge University Press:  15 February 2011

A. M. Payne ,
B. K. Crone  and
S. Wagner
A. M. Payne
Affiliation:
Department of Electrical Engineering, Princeton University, Princeton, NJ 08544–5263, ampayne@ee.princeton.edu
B. K. Crone
Affiliation:
Department of Electrical Engineering, Princeton University, Princeton, NJ 08544–5263, ampayne@ee.princeton.edu
S. Wagner
Affiliation:
Department of Electrical Engineering, Princeton University, Princeton, NJ 08544–5263, ampayne@ee.princeton.edu
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Abstract

We have deposited and analyzed solar cells from mixed SiCI2H2/SiH4 plasmas. Intrinsic and doped films were also grown to explain the cell results. The SiCI2H2 cells have lower fill factor and short circuit current density than the SiH4 cells due to the higher defect densities and lower photoconductivities of SiCI2H2/SiH4 material. Cell results showed low VQC if the n-layer was in contact with an i-layer deposited from SiCI2H2/SiH4. A pure silane buffer layer between the i- and n-layers was needed to attain the standard open circuit voltage. The reduced Voc results from a reduced conductivity of phosphorus-doped SiCI2H2/SiH4 material. However, comparison of doped films showed higher conductivities for boron-doped material grown from the SiCI2H2/SiH4 mixture than from pure silane.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 467: Symposium A – Amorphous and Microcrystalline Silicon Technology - 1997 , 1997 , 789
Copyright
Copyright © Materials Research Society 1997

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References

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