Hostname: page-component-745bb68f8f-kw2vx Total loading time: 0 Render date: 2025-01-15T06:50:03.088Z Has data issue: false hasContentIssue false
  • English
  • Français

A Solid State Amorphisation Reaction in Ti-Si Diffusion Couples: The Phase Field

Published online by Cambridge University Press:  25 February 2011

Ivo J. M. M. Raaijmakers ,
Piet H. Oosting  and
Alec H. Reader
Ivo J. M. M. Raaijmakers
Affiliation:
Philips Research Laboratories, P.O. Box 80.000, 5600JA Eindhoven, The Netherlands
Piet H. Oosting
Affiliation:
Philips Research Laboratories, P.O. Box 80.000, 5600JA Eindhoven, The Netherlands
Alec H. Reader
Affiliation:
Philips Research Laboratories, P.O. Box 80.000, 5600JA Eindhoven, The Netherlands
Get access

Abstract

The reactions in sputter deposited Si-Ti-Si diffusion couples were investigated with X-ray diffraction, Auger electron spectroscopy and cross-section transmission electron microscopy. Anneals at a temperature of 400°C resulted in the growth of an amorphous phase at the Si-Ti interfaces. Crystalline silicides were only found after an anneal at temperatures of 500°C or higher.

It was demonstrated that an amorphous layer of approximately 8 nm thickness sustained a concentration gradient from about 73% Si at the Si side to about 28% Si at the Ti side of the diffusion couple. The measured width of the phase field agreed with the width predicted from a calculated free energy versus composition diagram. Actually the observed phase field was found to be so wide, that it contains the stoichiometry of all equilibrium silicides. The consequences of our results for the explanation of silicide first phase nucleation were discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 103 , 1987 , 229
Copyright
Copyright © Materials Research Society 1988

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCE LIST

1.Holloway, K. and Sinclair, R., J. Appl. Phys. 61, 1359 (1987).Google Scholar
2.Raaijmakers, I.J.M.M., Reader, A.H. and Oosting, P.H., accepted for publication in J. Appl. Phys.Google Scholar
3.Kaufman, L., Calphad 3, 45 (1979).Google Scholar
4.Boom, R., de Boer, F.R. and Miedema, A.R., J. Less Common Metals 46, 271 (1976).Google Scholar
5. The heat of crystallisation of amorphous Ti-Si alloys was measured with differential scanning calorimetry (unpublished); see also Kemper, M. and Oosting, P.H., J. Appl. Phys. 53, 6214 (1982).Google Scholar
6.Walser, R.M. and Bené, R.W., Appl.Phys. Lett. 28, 624 (1976).Google Scholar