Hostname: page-component-745bb68f8f-d8cs5 Total loading time: 0 Render date: 2025-01-15T06:45:10.475Z Has data issue: false hasContentIssue false
  • English
  • Français

Stability Studies of Hydrogenated Amorphous Silicon Alloy Solar Cells Prepared with Hydrogen Dilution

Published online by Cambridge University Press:  16 February 2011

J. Yang ,
X. Xu  and
S. Guha
J. Yang
Affiliation:
United Solar Systems Corp., 1100 West Maple Road, Troy, MI 48084
X. Xu
Affiliation:
United Solar Systems Corp., 1100 West Maple Road, Troy, MI 48084
S. Guha
Affiliation:
United Solar Systems Corp., 1100 West Maple Road, Troy, MI 48084
Get access

Abstract

We have fabricated hydrogenated amorphous silicon alloy solar cells using hydrogen dilutions at 175 °C and 300 °C, and obtained improved photovoltaic characteristics in both the initial and degraded states for the highly diluted cells; both the fill factor and the open-circuit voltage exhibit higher values before and after light soaking. Infrared analyses reveal that for a given deposition temperature the amount of bonded hydrogen has similar concentrations between the high and low hydrogen diluted samples. Optical Modelling shows a 20 MeV difference in their optical bandgap. Defect densities obtained from constant photocurrent measurements give similar values for a given deposition temperature both before and after light soaking, inconsistent with solar cell performance.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 336: Symposium A – Amorphous Silicon Technology - 1994 , 1994 , 687
Copyright
Copyright © Materials Research Society 1994

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Yang, J., Ross, R., Glatfelter, T., Mohr, R., Hammond, G., Bernotaitis, C., Chen, E., Burdick, J., Hopson, M., and Guha, S., Proc. of 20th IEEE Photovoltaic Specialists Conference, Las Vegas, Nevada (IEEE, New York, 1988) Vol. 1, p. 241.Google Scholar
2. Guha, S., Yang, J., Banerjee, A., Glatfelter, T., Hoffman, K., Ovshinsky, S.R., Izu, M., Ovshinsky, H.C., and Deng, X. (presented in 1994 MRS Spring Meeting).Google Scholar
3. Yang, J. and Guha, S., Appl. Phys. Lett. 61, 2917 (1992).Google Scholar
4. Tanaka, K. and Matsuda, A., Mat. Sci. Report, 2, 139 (1987).Google Scholar
5. Doughty, D.A., Doyle, J.R., Lin, G.H., Gallagher, A., J. Appl. Phys. 67, 6220 (1990).Google Scholar
6. Guha, S., Narasimhan, K.L., and Pietruszko, S.M., J. Appl. Phys. 52, 859 (1981).Google Scholar
7. Guha, S., Yang, J., Jones, S.J., Chen, Y., and Williamson, D.L., Appl. Phys. Lett. 61, 1444 (1992).Google Scholar
8. Hoffman, K. and Glatfelter, T., Proc. of 23rd IEEE Photovoltaic Specialists Conference, Louisville, KY (IEEE, New York, 1993) p. 986.Google Scholar
9. Xu, X., Yang, J., and Guha, S., Proc. of 23rd IEEE Photovoltaic Specialists Conference, Louisville, KY (IEEE, New York, 1993) p. 971.Google Scholar
10. Guha, S., Yang, J., Banerjee, A., Glatfelter, T., Hoffman, K., and Xu, X., PVSEC-7, 43 (1993).Google Scholar
11. Xu, X., Yang, J., and Guha, S., Appl. Phys. Lett. 62, 1399 (1993).Google Scholar