Hostname: page-component-745bb68f8f-d8cs5 Total loading time: 0 Render date: 2025-01-15T07:12:54.270Z Has data issue: false hasContentIssue false
  • English
  • Français

Strain Relaxation in Heteroepitaxial Ge/Si Structures by Annealing Under Ultra High Pressure

Published online by Cambridge University Press:  22 February 2011

Hiroshi Ishiwara ,
Takayoshi Sato  and
Akira Sawaoka
Hiroshi Ishiwara
Affiliation:
Precision and Intelligence Laboratory, Tokyo Institute of Technology, 4259 Nagatsuda, Midoriku, Yokohama 227 Japan
Takayoshi Sato
Affiliation:
Precision and Intelligence Laboratory, Tokyo Institute of Technology, 4259 Nagatsuda, Midoriku, Yokohama 227 Japan
Akira Sawaoka
Affiliation:
Laboratory for Engineering Materials, Tokyo Institute of Technology
Get access

Abstract

A novel method to solve the thermal mismatch problems in a heteroepi-taxial structure is presented, in which an amorphous film deposited on a single crystalline substrate is crystallized in solid phase by annealing under ultra high pressure and both temperature and pressure are decreased proportionally. Under a specific relation between the temperature and pressure, it is expected that the effective thermal expansion coefficients, the expansion coefficients modified by elastic strain, of the film and substrate are equal and that neither defects nor strain is generated in the film during the cooling process. Theoretical consideration and experimental results for Ge films on Si(100) substrates are presented.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 239: Symposium D – Thin Films: Stresses and Mechanical Properties III , 1991 , 467
Copyright
Copyright © Materials Research Society 1992

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1) Kittel, C.; “Introduction to Solid State Physics”, 3rd ed. (Wiley & Sons, New York, 1966) Chap. 4Google Scholar